| PartNumber | FDC6301N | FDC6302P | FDC6303N |
| Description | MOSFET SSOT-6 N-CH 25V | MOSFET SSOT-6 P-CH -25V | MOSFET SSOT-6 N-CH 25V |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SSOT-6 | SSOT-6 | SSOT-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
| Id Continuous Drain Current | 220 mA | 120 mA | 680 mA |
| Rds On Drain Source Resistance | 3.8 Ohms | 10.6 Ohms | 450 mOhms |
| Vgs Gate Source Voltage | 8 V, - 500 mV | 8 V | 8 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 900 mW | 900 mW | 900 mW |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Series | FDC6301N | FDC6302P | FDC6303N |
| Transistor Type | 2 N-Channel | 2 P-Channel | 2 N-Channel |
| Type | FET | FET | FET |
| Width | 1.6 mm | 1.6 mm | 1.6 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 0.25 S | 0.135 S | 0.145 S |
| Fall Time | 4.5 ns | 8 ns | 8.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.5 ns | 8 ns | 8.5 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 4 ns | 9 ns | 17 ns |
| Typical Turn On Delay Time | 5 ns | 5 ns | 3 ns |
| Part # Aliases | FDC6301N_NL | FDC6302P_NL | FDC6303N_NL |
| Unit Weight | 0.001058 oz | 0.001270 oz | 0.001270 oz |