IRF6725MTR1PBF

Mfr. #:: IRF6725MTR1PBF
Manufacturer:: Infineon / IR
Description:: MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6725MTR1PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF6725MTR1PBF Datasheet IRF6725MTR1PBF Datasheet (P4-P6)IRF6725MTR1PBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-MX

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 170 A

Rds On - Drain-Source Resistance:: 3.2 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.35 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 36 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 100 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Type:: DirectFET Power MOSFET

Width:: 5.05 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 150 S

Fall Time:: 13 ns

Product Type:: MOSFET

Rise Time:: 22 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 19 ns

Typical Turn-On Delay Time:: 16 ns

Part # Aliases:: SP001530850

Unit Weight:: 0.017637 oz

Tags: IRF6725M, IRF6725, IRF672, IRF67, IRF6, IRF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6725MTR1PBF Description

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 170A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***(Formerly Allied Electronics): MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.7 mOhm, ID 28A, DirectFET

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:220A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V

*** Source Electronics: MOSFET N-CH 30V 32A DIRECTFET / Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MX T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):1.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***(Formerly Allied Electronics): A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31

***ark: N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)

***et Europe: Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***ment14 APAC: MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1170mJ; Base Number:6629; Cont Current Id @ 70°C:23; Current Id Max:23A; Fall Time tf:7.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:230A; Rise Time:67ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®

***ment14 APAC: MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***icroelectronics: N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package

*** Source Electronics: Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5

***ure Electronics: N-Channel 30 V 1.75 mOhm Surface Mount STripFET V MosFet - PowerFLAT 5x6

***ark: Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes

***ical: Trans MOSFET N-CH 25V 39A 7-Pin Direct-FET MX T/R

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:39A; On Resistance, Rds(on):1.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:MX ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, DIRECTFET, 25V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6716; Current Id Max:39A; Package / Case:MX; Power Dissipation Pd:3.6mW; Pulse Current Idm:320A; SMD Marking:3.6; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V

Market price

Part #	Mfg.	Description	Stock	Price
IRF6725MTR1PBF DISTI # IRF6725MTR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 28A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6725MTR1PBF DISTI # IRF6725MTR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 28A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6725MTR1PBF DISTI # IRF6725MTR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 28A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6725MTR1PBF DISTI # 70018865	Infineon Technologies AG	MOSFET,N-Ch,VDSS 30V,RDS(ON) 1.7 mOhm,ID 28A,DirectFET RoHS: Compliant	0	1000:$1.7500 2000:$1.5900
IRF6725MTR1PBF DISTI # 942-IRF6725MTR1PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS: Compliant	390	1:$2.9800 10:$1.5800 100:$1.4000 500:$1.3100 1000:$1.2500 2000:$1.2100 5000:$1.1500
IRF6725MTR1PBF	International Rectifier	RoHS: Compliant	Europe - 495
IRF6725MTR1PBF DISTI # IRF6725MTR1PBF	Infineon Technologies AG	N-Ch 30V 170A 100W 0,0022R MX RoHS: Compliant	10	10:€1.1000 50:€0.9010 200:€0.8010 500:€0.7745
IRF6725MTR1PBF DISTI # 1602264	Infineon Technologies AG	MOSFET, N, DIRECTFET MX RoHS: Compliant	0	1:$4.7200 10:$2.5000 100:$2.2200 500:$2.0700 1000:$1.9800 2000:$1.9400

Image	Part #	Description
	Mfr.#: IRF6725MTRPBF OMO.#: OMO-IRF6725MTRPBF	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
	Mfr.#: IRF6725MTR1PBF OMO.#: OMO-IRF6725MTR1PBF	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
	Mfr.#: IRF6725MTR1PBF. OMO.#: OMO-IRF6725MTR1PBF--1190	New and Original
	Mfr.#: IRF6725NTRPBF OMO.#: OMO-IRF6725NTRPBF-1190	New and Original
	Mfr.#: IRF6725MTR1PBF OMO.#: OMO-IRF6725MTR1PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
	Mfr.#: IRF6725MTRPBF OMO.#: OMO-IRF6725MTRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET MX

IRF6725MTR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes