IRF6725

IRF6725MTRPBF vs IRF6725MTR1PBF

 
PartNumberIRF6725MTRPBFIRF6725MTR1PBF
DescriptionMOSFET 30V 1 N-CH HEXFET DIRECTFET MXMOSFET 30V 1 N-CH HEXFET DIRECTFET MX
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseDirectFET-MXDirectFET-MX
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current170 A170 A
Rds On Drain Source Resistance2.4 mOhms3.2 mOhms
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge36 nC36 nC
Pd Power Dissipation100 W100 W
ConfigurationSingleSingle
PackagingReelReel
Height0.7 mm0.7 mm
Length6.35 mm6.35 mm
Transistor Type1 N-Channel1 N-Channel
Width5.05 mm5.05 mm
BrandInfineon TechnologiesInfineon / IR
Moisture SensitiveYes-
Product TypeMOSFETMOSFET
Factory Pack Quantity48001000
SubcategoryMOSFETsMOSFETs
Part # AliasesSP001526964SP001530850
Vgs th Gate Source Threshold Voltage-2.35 V
Minimum Operating Temperature-- 40 C
Maximum Operating Temperature-+ 150 C
Channel Mode-Enhancement
Type-DirectFET Power MOSFET
Forward Transconductance Min-150 S
Fall Time-13 ns
Rise Time-22 ns
Typical Turn Off Delay Time-19 ns
Typical Turn On Delay Time-16 ns
Unit Weight-0.017637 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF6725MTRPBF MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6725MTR1PBF IGBT Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6725MTRPBF RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
Infineon / IR
Infineon / IR
IRF6725MTR1PBF MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6725MTR1PBF. New and Original
IRF6725NTRPBF New and Original
Top