PartNumber | IRF6725MTRPBF | IRF6725MTR1PBF |
Description | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DirectFET-MX | DirectFET-MX |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V |
Id Continuous Drain Current | 170 A | 170 A |
Rds On Drain Source Resistance | 2.4 mOhms | 3.2 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 36 nC | 36 nC |
Pd Power Dissipation | 100 W | 100 W |
Configuration | Single | Single |
Packaging | Reel | Reel |
Height | 0.7 mm | 0.7 mm |
Length | 6.35 mm | 6.35 mm |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 5.05 mm | 5.05 mm |
Brand | Infineon Technologies | Infineon / IR |
Moisture Sensitive | Yes | - |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 4800 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | SP001526964 | SP001530850 |
Vgs th Gate Source Threshold Voltage | - | 2.35 V |
Minimum Operating Temperature | - | - 40 C |
Maximum Operating Temperature | - | + 150 C |
Channel Mode | - | Enhancement |
Type | - | DirectFET Power MOSFET |
Forward Transconductance Min | - | 150 S |
Fall Time | - | 13 ns |
Rise Time | - | 22 ns |
Typical Turn Off Delay Time | - | 19 ns |
Typical Turn On Delay Time | - | 16 ns |
Unit Weight | - | 0.017637 oz |