SPD07N20GBTMA1

Mfr. #:: SPD07N20GBTMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 200V 7A DPAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: SPD07N20GBTMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 7 A

Rds On - Drain-Source Resistance:: 300 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 31.5 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 40 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: SIPMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 3 S

Fall Time:: 30 ns

Product Type:: MOSFET

Rise Time:: 40 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 55 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: G SP000449008 SPD07N20 SPD07N20GXT

Unit Weight:: 0.139332 oz

Tags: SPD07N20G, SPD07N2, SPD07N, SPD07, SPD0, SPD

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Step1:
Vacuum Packaging with PL

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SPD07N20GBTMA1 Description

***ical: Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) DPAK T/R

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

***nell: MOSFET, N-CH, 200V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 40W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***icroelectronics: N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package

***ure Electronics: N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 200V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ter Electronics: N-CH/LL/100V/8.4A/0.2OHM@VGS=5V/Substitute of IRLR120TM

***Yang: MOSFET 100V N-Channel a-FET Logic Level - Bulk

***nell: MOSFET, 100V, 8.4A; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 5V

***ure Electronics: Single P-Channel 60 V 155 mOhm Surface Mount TrenchFET Power Mosfet - TO-252

***ment14 APAC: MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Source Voltage Vds:-60V; On Resistance

***ark: MOSFET, P-CH, 60V, 8.2A, 150DEG C, 20.8W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nell: MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.2A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2V; Power Dissipation Pd: 20.8W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***-Wing Technology: Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 7.8A Tc 7.8A 2.5W 20ns

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P, 60V, 7.8A; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: -60V; Voltage Vgs Rds on Measurement: -10V

***emi: N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ

***r Electronics: Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70mW; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.6A; Package / Case:DPAK; Power Dissipation Pd:70mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***ure Electronics: N-Channel 500 V 600 mOhm 32 nC CoolMOS Power Mosfet - PG-TO252-3-1

*** Source Electronics: Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.6A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Market price

Part #	Mfg.	Description	Stock
SPD07N20GBTMA1 DISTI # SPD07N20GBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD07N20GBTMA1 DISTI # SPD07N20GBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SPD07N20GBTMA1 DISTI # SPD07N20GBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SPD07N20GBTMA1 DISTI # 726-SPD07N20GBTMA1	Infineon Technologies AG	MOSFET N-Ch 200V 7A DPAK-2 RoHS: Compliant	0
SPD07N20 G DISTI # 726-SPD07N20G	Infineon Technologies AG	MOSFET N-Ch 200V 7A DPAK-2 RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: SPD07N20GBTMA1 OMO.#: OMO-SPD07N20GBTMA1	MOSFET N-Ch 200V 7A DPAK-2
	Mfr.#: SPD07N20 OMO.#: OMO-SPD07N20	MOSFET N-Ch 200V 7A DPAK-2
	Mfr.#: SPD07N20 OMO.#: OMO-SPD07N20-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 7A TO-252
	Mfr.#: SPD07N20 G OMO.#: OMO-SPD07N20-G-1190	MOSFET N-Ch 200V 7A DPAK-2
	Mfr.#: SPD07N20G OMO.#: OMO-SPD07N20G-1190	New and Original
	Mfr.#: SPD07N20GBTMA1 OMO.#: OMO-SPD07N20GBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 7A TO252

SPD07N20GBTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes