PartNumber | SPD07N20GBTMA1 | SPD07N60C3 | SPD07N20 |
Description | MOSFET N-Ch 200V 7A DPAK-2 | MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C3 | MOSFET N-Ch 200V 7A DPAK-2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 600 V | 200 V |
Id Continuous Drain Current | 7 A | 7.3 A | 7 A |
Rds On Drain Source Resistance | 300 mOhms | 600 mOhms | 400 mOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 31.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
Pd Power Dissipation | 40 W | 83 W | 40 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | SIPMOS | CoolMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 3 S | - | - |
Fall Time | 30 ns | 7 ns | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 40 ns | 3.5 ns | 40 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 55 ns | 60 ns | 55 ns |
Typical Turn On Delay Time | 10 ns | 6 ns | 10 ns |
Part # Aliases | G SP000449008 SPD07N20 SPD07N20GXT | SP000313947 SPD07N60C3BTMA1 SPD7N6C3XT | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Series | - | CoolMOS C3 | - |
Moisture Sensitive | - | - | Yes |