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BSC889N03LSG

BSC889N03LSG
Mfr. #:
BSC889N03LSG
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lifecycle:
New from this manufacturer.
Datasheet:
BSC889N03LSG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INFINEON
Product Category
FETs - Single
Tags
BSC889N03LSG, BSC889N03L, BSC889, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP
***i-Key
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 50 V 3.5 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, AEC-Q101, N CH, 50V, 0.2A, 0.3W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
***ark
Mosfet, Aec-Q101, N-Ch, 60V, Sot-23-3 Rohs Compliant: Yes
***nell
MOSFET, AEC-Q101, N-CH, 60V, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4
***et
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R
***ark
Mosfet, N-Ch, 60V, 0.2A, Sot-23-3 Rohs Compliant: Yes
***nell
MOSFET, N-CH, 60V, 0.2A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; P
***ure Electronics
N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3
***emi
N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ
***ment14 APAC
MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.7A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 83 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 6 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***ure Electronics
SQ2362ES Series 60 V 0.068 Ohm 4.3 A SMT Automotive N-Channel Mosfet - SOT-23
***enic
60V 4.3A 95m´Î@10V4.5A 3W 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ow.cn
Trans MOSFET N-CH 60V 4.3A Automotive 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:60V; On Resistance
***nsix Microsemi
Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***nell
MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)
***ure Electronics
Single P-Channel 60 V 1 W 6 nC Silicon Surface Mount Mosfet - SOT-23
***emi
P-Channel Power MOSFET, -60V, -1.8A, 250mΩ
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V Rohs Compliant: Yes
*** Stop Electro
Small Signal Field-Effect Transistor, 1.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part # Mfg. Description Stock Price
BSC889N03LSGATMA1
DISTI # BSC889N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 45A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSC889N03LSGATMA1
    DISTI # BSC889N03LSGATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 45A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSC889N03LSGATMA1
      DISTI # BSC889N03LSGATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 45A TDSON-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSC889N03LS G
        DISTI # 726-BSC889N03LSG        		Infineon Technologies AGMOSFET N-Ch 30V 13A TDSON-8
        RoHS: Compliant        		0
          BSC889N03LSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		329990
          • 1000:$0.2600
          • 500:$0.2800
          • 100:$0.2900
          • 25:$0.3000
          • 1:$0.3200
          BSC889N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		30000
          • 1000:$0.2800
          • 500:$0.2900
          • 100:$0.3000
          • 25:$0.3200
          • 1:$0.3400
          Image Part # Description
          BSC889N03LS

          Mfr.#: BSC889N03LS

          OMO.#: OMO-BSC889N03LS-1190

          		 New and Original
          BSC889N03LS G

          Mfr.#: BSC889N03LS G

          OMO.#: OMO-BSC889N03LS-G-1190

          		 MOSFET N-Ch 30V 13A TDSON-8
          BSC889N03LSG

          Mfr.#: BSC889N03LSG

          OMO.#: OMO-BSC889N03LSG-1190

          		 Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          BSC889N03LSG E8178

          Mfr.#: BSC889N03LSG E8178

          OMO.#: OMO-BSC889N03LSG-E8178-1190

          		 New and Original
          BSC889N03LSGATMA1

          Mfr.#: BSC889N03LSGATMA1

          OMO.#: OMO-BSC889N03LSGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 45A TDSON-8
          BSC889N03LSGE8178

          Mfr.#: BSC889N03LSGE8178

          OMO.#: OMO-BSC889N03LSGE8178-1190

          		 New and Original
          BSC889N03MS

          Mfr.#: BSC889N03MS

          OMO.#: OMO-BSC889N03MS-1190

          		 New and Original
          BSC889N03MS G

          Mfr.#: BSC889N03MS G

          OMO.#: OMO-BSC889N03MS-G-1190

          		 MOSFET N-Ch 30V 12A TDSON-8
          BSC889N03MSG

          Mfr.#: BSC889N03MSG

          OMO.#: OMO-BSC889N03MSG-1190

          		 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          BSC889N03MSGATMA1

          Mfr.#: BSC889N03MSGATMA1

          OMO.#: OMO-BSC889N03MSGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 44A TDSON-8
          Availability
          Stock:
          Available
          On Order:
          4000
          Enter Quantity:
          Current price of BSC889N03LSG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $0.39
          $0.39
          10
          $0.37
          $3.70
          100
          $0.35
          $35.10
          500
          $0.33
          $165.75
          1000
          $0.31
          $312.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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