 |  | | |
| PartNumber | BSC882N03LS G | BSC882N03MSGATMA1 | BSC882N03LSGATMA1 |
| Description | MOSFET N-Ch 34V 100A SON-8 | MOSFET N-CH 34V 22A TDSON-8 | MOSFET N-CH TDSON-8 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 34 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - | - |
| Vgs Gate Source Voltage | 2 V | - | - |
| Qg Gate Charge | 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | BSC882N03 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 100 S | - | - |
| Fall Time | 9.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSC882N03LSGATMA1 BSC882N3LSGXT SP000686916 | - | - |
| Unit Weight | 0.002677 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC882N03LS G | MOSFET N-Ch 34V 100A SON-8 | |
| BSC883N03LS G | MOSFET N-Ch 34V 98A TDSON-8 | ||
| BSC886N03LS G | MOSFET N-Ch 30V 65A TDSON-8 | ||
| BSC882N03MSGATMA1 | MOSFET N-CH 34V 22A TDSON-8 | ||
| BSC883N03LSGATMA1 | MOSFET N-CH 34V 17A TDSON-8 | ||
| BSC883N03MSGATMA1 | MOSFET N-CH 34V 19A TDSON-8 | ||
| BSC884N03MS G | MOSFET N-CH 34V 17A TDSON-8 | ||
| BSC886N03LSGATMA1 | MOSFET N-CH 30V 65A TDSON-8 | ||
| BSC889N03LSGATMA1 | MOSFET N-CH 30V 45A TDSON-8 | ||
| BSC889N03MSGATMA1 | MOSFET N-CH 30V 44A TDSON-8 | ||
| BSC882N03LSGATMA1 | MOSFET N-CH TDSON-8 | ||
Infineon Technologies |
BSC883N03LSGATMA1 | MOSFET LV POWER MOS | |
| BSC886N03LSGATMA1 | MOSFET LV POWER MOS | ||
| BSC883N03LSGXT | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) | ||
| BSC882N03LS | New and Original | ||
| BSC882N03LSG | Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G) | ||
| BSC882N03MS | New and Original | ||
| BSC882N03MS G | MOSFET N-Ch 30V 22A TDSON-8 | ||
| BSC882N03MSG | Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC882N03MSGXT | New and Original | ||
| BSC883N03LS | New and Original | ||
| BSC883N03LSG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC883N03LSGATMA1 , TDZF | New and Original | ||
| BSC883N03MS | New and Original | ||
| BSC883N03MSG | Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC884N03MS | New and Original | ||
| BSC884N03MSG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC884N03MSGXT | New and Original | ||
| BSC886N03LS | New and Original | ||
| BSC886N03LS G | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R | ||
| BSC886N03LSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC886N03LSG E8178 | New and Original | ||
| BSC886N03LSGATMA1 , TDZF | New and Original | ||
| BSC889N03LS | New and Original | ||
| BSC889N03LS G | MOSFET N-Ch 30V 13A TDSON-8 | ||
| BSC889N03LSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC889N03LSG E8178 | New and Original | ||
| BSC889N03LSGE8178 | New and Original | ||
| BSC889N03MS | New and Original | ||
| BSC889N03MS G | MOSFET N-Ch 30V 12A TDSON-8 | ||
| BSC889N03MSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC88ZN03MS | New and Original | ||
| BSC883N03MS G | IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 | ||
| BSC882N03LS G | RF Bipolar Transistors MOSFET N-Ch 34V 100A SON-8 | ||
| BSC883N03LS G | RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 |