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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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BSC883N03LS G DISTI # BSC883N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: BSC883N03LS G) RoHS: Compliant Min Qty: 5000 | Asia - 0 |
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BSC883N03LS G DISTI # SP000507422 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: SP000507422) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
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BSC883N03LSGXT DISTI # BSC883N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
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BSC883N03LS G DISTI # 726-BSC883N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 98A TDSON-8 RoHS: Compliant | 4969 |
|
BSC883N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 14999 |
|
BSC883N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
BSC883N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9910 |
|
BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4767 |
|
BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4767 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G |
MOSFET N-Ch 34V 98A TDSON-8 | |
Mfr.#: BSC883N03LSGATMA1 OMO.#: OMO-BSC883N03LSGATMA1 |
MOSFET LV POWER MOS | |
Mfr.#: BSC883N03LS OMO.#: OMO-BSC883N03LS-1190 |
New and Original | |
Mfr.#: BSC883N03LSG OMO.#: OMO-BSC883N03LSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC883N03LSGATMA1 |
MOSFET N-CH 34V 17A TDSON-8 | |
Mfr.#: BSC883N03MS OMO.#: OMO-BSC883N03MS-1190 |
New and Original | |
Mfr.#: BSC883N03MSG OMO.#: OMO-BSC883N03MSG-1190 |
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC883N03MSGATMA1 |
MOSFET N-CH 34V 19A TDSON-8 | |
Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 | |
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 |