BSC883N03LS G

BSC883N03LS G
Mfr. #:
BSC883N03LS G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 34V 98A TDSON-8
Lifecycle:
New from this manufacturer.
Datasheet:
BSC883N03LS G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
34 V
Id - Continuous Drain Current:
98 A
Rds On - Drain-Source Resistance:
3.8 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
BSC883N03
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
4.4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
6.4 ns
Part # Aliases:
BSC883N03LSGATMA1 BSC883N3LSGXT SP000507422
Tags
BSC883N03LSG, BSC883N03L, BSC883, BSC8, BSC
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC883N03LSGATMA1
DISTI # BSC883N03LSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 34V 17A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    BSC883N03LSGATMA1
    DISTI # BSC883N03LSGATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 34V 17A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      BSC883N03LSGATMA1
      DISTI # BSC883N03LSGATMA1TR-ND
      Infineon Technologies AGMOSFET N-CH 34V 17A TDSON-8
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 5000:$0.3341
      BSC883N03LS G
      DISTI # BSC883N03LS G
      Infineon Technologies AGTrans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: BSC883N03LS G)
      RoHS: Compliant
      Min Qty: 5000
      Asia - 0
      • 5000:$0.2143
      • 10000:$0.2083
      • 15000:$0.2027
      • 25000:$0.1974
      • 50000:$0.1948
      • 125000:$0.1923
      • 250000:$0.1899
      BSC883N03LS G
      DISTI # SP000507422
      Infineon Technologies AGTrans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: SP000507422)
      RoHS: Compliant
      Min Qty: 5000
      Europe - 0
      • 5000:€0.4389
      • 10000:€0.3719
      • 20000:€0.3309
      • 30000:€0.2979
      • 50000:€0.2769
      BSC883N03LSGXT
      DISTI # BSC883N03LSGATMA1
      Infineon Technologies AGTrans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1)
      RoHS: Compliant
      Min Qty: 5000
      Container: Reel
      Americas - 0
      • 5000:$0.2589
      • 10000:$0.2499
      • 20000:$0.2399
      • 30000:$0.2319
      • 50000:$0.2279
      BSC883N03LS G
      DISTI # 726-BSC883N03LSG
      Infineon Technologies AGMOSFET N-Ch 34V 98A TDSON-8
      RoHS: Compliant
      4969
      • 1:$0.8400
      • 10:$0.6980
      • 100:$0.4500
      • 1000:$0.3600
      BSC883N03LSGInfineon Technologies AGPower Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      14999
      • 1000:$0.3000
      • 500:$0.3200
      • 100:$0.3300
      • 25:$0.3500
      • 1:$0.3700
      BSC883N03LS GInfineon Technologies AG 
      RoHS: Not Compliant
      5000
      • 1000:$0.3200
      • 500:$0.3300
      • 100:$0.3500
      • 25:$0.3600
      • 1:$0.3900
      BSC883N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      9910
      • 1000:$0.3200
      • 500:$0.3300
      • 100:$0.3500
      • 25:$0.3600
      • 1:$0.3900
      BSC883N03LSGATMA1
      DISTI # 2617421
      Infineon Technologies AGMOSFET, N-CH, 34V, 98A, PG-TDSON-8
      RoHS: Compliant
      4767
      • 1000:$0.6510
      • 500:$0.8130
      • 100:$1.1000
      • 10:$1.4300
      • 1:$1.6300
      BSC883N03LSGATMA1
      DISTI # 2617421
      Infineon Technologies AGMOSFET, N-CH, 34V, 98A, PG-TDSON-8
      RoHS: Compliant
      4767
      • 500:£0.3190
      • 250:£0.3750
      • 100:£0.4310
      • 25:£0.5590
      • 5:£0.6230
      Image Part # Description
      BSC883N03LS G

      Mfr.#: BSC883N03LS G

      OMO.#: OMO-BSC883N03LS-G

      MOSFET N-Ch 34V 98A TDSON-8
      BSC883N03LSGATMA1

      Mfr.#: BSC883N03LSGATMA1

      OMO.#: OMO-BSC883N03LSGATMA1

      MOSFET LV POWER MOS
      BSC883N03LS

      Mfr.#: BSC883N03LS

      OMO.#: OMO-BSC883N03LS-1190

      New and Original
      BSC883N03LSG

      Mfr.#: BSC883N03LSG

      OMO.#: OMO-BSC883N03LSG-1190

      Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC883N03LSGATMA1

      Mfr.#: BSC883N03LSGATMA1

      OMO.#: OMO-BSC883N03LSGATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 34V 17A TDSON-8
      BSC883N03MS

      Mfr.#: BSC883N03MS

      OMO.#: OMO-BSC883N03MS-1190

      New and Original
      BSC883N03MSG

      Mfr.#: BSC883N03MSG

      OMO.#: OMO-BSC883N03MSG-1190

      Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC883N03MSGATMA1

      Mfr.#: BSC883N03MSGATMA1

      OMO.#: OMO-BSC883N03MSGATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 34V 19A TDSON-8
      BSC883N03MS G

      Mfr.#: BSC883N03MS G

      OMO.#: OMO-BSC883N03MS-G-126

      IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8
      BSC883N03LS G

      Mfr.#: BSC883N03LS G

      OMO.#: OMO-BSC883N03LS-G-317

      RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8
      Availability
      Stock:
      Available
      On Order:
      1987
      Enter Quantity:
      Current price of BSC883N03LS G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.84
      $0.84
      10
      $0.70
      $6.98
      100
      $0.45
      $45.00
      1000
      $0.36
      $360.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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