FDD8N50NZTM

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

6.5 A

Rds On - Drain-Source Resistance:

850 mOhms

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

14 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

90 W

Configuration:

Single

Packaging:

Reel

Height:

2.39 mm

Length:

6.73 mm

Series:

FDD8N50NZ

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

27 ns

Product Type:

MOSFET

Rise Time:

34 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

43 ns

Typical Turn-On Delay Time:

17 ns

Unit Weight:

0.009184 oz

Tags

FDD8N, FDD8, FDD