SI4804BDY-T1-E3

Mfr. #:: SI4804BDY-T1-E3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 30V 7.5A 2W
Lifecycle:: New from this manufacturer.
Datasheet:: SI4804BDY-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4804BDY-T1-E3 Datasheet SI4804BDY-T1-E3 Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR

Part-Aliases: SI4804BDY-E3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual

FET-Type: 2 N-Channel (Dual)

Power-Max: 1.1W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 5.7A

Rds-On-Max-Id-Vgs: 22 mOhm @ 7.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 11nC @ 4.5V

Pd-Power-Dissipation: 1.1 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 10 ns

Rise-Time: 10 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 5.7 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 22 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 19 ns

Typical-Turn-On-Delay-Time: 9 ns

Channel-Mode: Enhancement

Tags: SI4804BDY-T1-E, SI4804BDY-T, SI4804BDY, SI4804BD, SI4804B, SI4804, SI480, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4804BDY-T1-E3 Description

***th Star Micro: Transistor MOSFET N-CH 30V 5.7A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7.5A; On Resistance, Rds(on):0.022ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, NN, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:7.5A; Resistance, Rds On:0.022ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:7nC; No. of Pins:8; Power, Pd:1.1W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.022ohm; Resistance, Rds on @ Vgs = 10V N Channel:0.022ohm; Resistance, Rds on @ Vgs = 4.5V:0.03ohm; Transistors, No. of:2; Voltage, Vds Max:30V; Width, Tape:12mm

Market price

Part #	Mfg.	Description	Stock	Price
SI4804BDY-T1-E3 DISTI # SI4804BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4804BDY-T1-E3 DISTI # SI4804BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI4804BDY-T1-E3 DISTI # SI4804BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI4804BDY-T1-E3 DISTI # 781-SI4804BDY-E3	Vishay Intertechnologies	MOSFET 30V 7.5A 2W RoHS: Compliant	0
SI4804BDY-T1-E3	Vishay Siliconix	5700 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	1960	511:$0.3500 90:$0.3920 1:$1.1200
SI4804BDY-T1-E3	Vishay Siliconix		1344
SI4804BDYT1E3	Vishay Semiconductors	INSTOCK	1436

Related products

Image	Part #	Description
	Mfr.#: SI4804BDY-T1-GE3 OMO.#: OMO-SI4804BDY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
	Mfr.#: SI4804BDY-T1-E3 OMO.#: OMO-SI4804BDY-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 7.5A 2W
	Mfr.#: SI4804B OMO.#: OMO-SI4804B-1190	New and Original
	Mfr.#: SI4804BDT-T1-E3 OMO.#: OMO-SI4804BDT-T1-E3-1190	New and Original
	Mfr.#: SI4804BDY OMO.#: OMO-SI4804BDY-1190	New and Original
	Mfr.#: SI4804BDY-T1 OMO.#: OMO-SI4804BDY-T1-1190	New and Original
	Mfr.#: SI4804BDY-T1-E3 (PB) OMO.#: OMO-SI4804BDY-T1-E3-PB--1190	New and Original
	Mfr.#: SI4804BDY-T1-E3 GE3 OMO.#: OMO-SI4804BDY-T1-E3-GE3-1190	New and Original
	Mfr.#: SI4804BDY-T1-E3. OMO.#: OMO-SI4804BDY-T1-E3--1190	New and Original
	Mfr.#: SI4804BDY-T1-GE3 OMO.#: OMO-SI4804BDY-T1-GE3-VISHAY	MOSFET 2N-CH 30V 5.7A 8SOIC

Availability

Stock:: Available
On Order:: 1500
Enter Quantity:

Current price of SI4804BDY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.52~~; ~~$0.52~~

10: ~~$0.50~~; ~~$4.99~~

100: ~~$0.47~~; ~~$47.25~~

500: ~~$0.45~~; ~~$223.15~~

1000: ~~$0.42~~; ~~$420.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI4804BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes