SI4804BDY-T1-E3 Datasheet SI4804BDY-T1-GE3, SI4804BDY-T1-E3 | P1-P3

Vishay Siliconix

Si4804BDY

Document Number: 72061

S10-0461-Rev. G, 22-Feb-10

www.vishay.com

1

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• PWM Optimized

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Symmetrical Buck-Boost DC/DC Converter

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

30

0.022 at V

GS

= 10 V

7.5

0.030 at V

GS

= 4.5 V

6.5

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4804BDY-T1-E3 (Lead (Pb)-free)

Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

D

1

G

1

S

1

N-Channel MOSFET

D

2

G

2

S

2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

7.5 5.7

A

T

A

= 70 °C

6.0 4.6

Pulsed Drain Current

I

DM

30

Continuous Source Current (Diode Conduction)

a

I

S

1.7 0.9

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

10

Single Pulse Avalanche Energy

E

AS

5mJ

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

2.0 1.1

W

T

A

= 70 °C

1.3 0.7

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

Limits

Unit

Typ. Max.

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

52 62.5

°C/W

Steady State 93 110

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

35 40

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Document Number: 72061

S10-0461-Rev. G, 22-Feb-10

Vishay Siliconix

Si4804BDY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Typ.

a

Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.8 3.0 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

1

µA

V

DS

= 30 V, V

GS

= 0 V, T

J

= 85 °C

15

On-State Drain Current

b

I

D(on)

V

DS

= 5 V, V

GS

= 10 V

20 A

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 7.5 A

0.017 0.022

Ω

V

GS

= 4.5 V, I

D

= 6.5 A

0.024 0.030

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 7.5 A

19 S

Diode Forward Voltage

b

V

SD

I

S

= 1 A, V

GS

= 0 V

0.75 1.2 V

Dynamic

a

Total Gate Charge

Q

g

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 7.5 A

711

nCGate-Source Charge

Q

gs

2.9

Gate-Drain Charge

Q

gd

2.5

Gate Resistance

R

g

0.5 1.5 2.6 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 15 V, R

L

= 15 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

g

= 6 Ω

915

ns

Rise Time

t

r

10 17

Turn-Off Delay Time

t

d(off)

19 30

Fall Time

t

f

915

Source-Drain Reverse Recovery Time

t

rr

I

F

= 1.7 A, dI/dt = 100 A/µs

35 55

Document Number: 72061

S10-0461-Rev. G, 22-Feb-10

www.vishay.com

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Vishay Siliconix

Si4804BDY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

5

10

15

20

25

30

0246810

V

GS

= 10 V thru 5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

3 V

4 V

- On Resistance (Ω)R

DS(on)

0.000

0.010

0.020

0.030

0.040

0 5 10 15 20 25 30

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0

2

4

6

8

10

0 3 6 9 12 15

V

DS

= 15 V

I

D

= 7.5 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

30

012345

T

C

= 125 °C

- 55 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

240

480

720

960

1200

0 5 10 15 20 25 30

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

-

Capacitance (pF)

C

oss

C

iss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 7.5 A

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance R

DS(on)

SI4804BDY-T1-E3

SI4804BDY-T1-E3

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