FDT86102LZ

FDT86102LZ
Mfr. #:
FDT86102LZ
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 100V 6.6A SOT-223
Lifecycle:
New from this manufacturer.
Datasheet:
FDT86102LZ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
FDT86102LZ more Information
Product Attribute
Attribute Value
Manufacturer
Fairchi
Product Category
FETs - Single
Series
PowerTrenchR
Packaging
Digi-ReelR Alternate Packaging
Unit-Weight
0.008826 oz
Mounting-Style
SMD/SMT
Package-Case
TO-261-4, TO-261AA
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
SOT-223-4
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
1W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Input-Capacitance-Ciss-Vds
1490pF @ 50V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
6.6A (Ta)
Rds-On-Max-Id-Vgs
28 mOhm @ 6.6A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Charge-Qg-Vgs
25nC @ 10V
Pd-Power-Dissipation
2.2 W
Maximum-Operating-Temperature
+ 150 C
Id-Continuous-Drain-Current
6.6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistance
28 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
17 nC
Forward-Transconductance-Min
26 S
Tags
FDT86102, FDT8610, FDT861, FDT8, FDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 6.6 A 28 mOhm PowerTrench® Mosfet - SOT-223
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ
***et Europe
Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
***ment14 APAC
MOSFET, N CH, 100V, 6.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:40A; Voltage Vgs th Max:3V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Part # Mfg. Description Stock Price
FDT86102LZ
DISTI # FDT86102LZFSTR-ND
ON SemiconductorMOSFET N-CH 100V 6.6A SOT-223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
On Order
  • 4000:$0.7425
FDT86102LZ
DISTI # FDT86102LZFSCT-ND
ON SemiconductorMOSFET N-CH 100V 6.6A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
FDT86102LZ
DISTI # FDT86102LZFSDKR-ND
ON SemiconductorMOSFET N-CH 100V 6.6A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
FDT86102LZ
DISTI # FDT86102LZ
ON SemiconductorTrans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86102LZ)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    FDT86102LZ
    DISTI # FDT86102LZ
    ON SemiconductorTrans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86102LZ)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel
    Americas - 0
    • 4000:$0.6529
    • 8000:$0.6489
    • 16000:$0.6409
    • 24000:$0.6319
    • 40000:$0.6169
    FDT86102LZ
    DISTI # 27T6450
    ON SemiconductorMOSFET Transistor, N Channel, 6.6 A, 100 V, 0.022 ohm, 10 V, 1.4 V0
    • 1:$0.6750
    • 4000:$0.6630
    • 8000:$0.6500
    • 16000:$0.6250
    • 24000:$0.6020
    • 40000:$0.6000
    FDT86102LZ.
    DISTI # 29AC6323
    Fairchild Semiconductor CorporationFET 100V 28.0 MOHM SOT223 ROHS COMPLIANT: YES0
    • 1:$0.6750
    • 4000:$0.6630
    • 8000:$0.6500
    • 16000:$0.6250
    • 24000:$0.6020
    • 40000:$0.6000
    FDT86102LZ
    DISTI # 512-FDT86102LZ
    ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant
    0
    • 1:$1.4800
    • 10:$1.2500
    • 100:$1.0000
    • 500:$0.8760
    • 1000:$0.7250
    • 4000:$0.6510
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    New and Original
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    Mfr.#: FDT86102LZ

    OMO.#: OMO-FDT86102LZ-ON-SEMICONDUCTOR

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    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of FDT86102LZ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.90
    $0.90
    10
    $0.86
    $8.55
    100
    $0.81
    $81.00
    500
    $0.76
    $382.50
    1000
    $0.72
    $720.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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