PartNumber | FDT86102LZ | FDT86102 | FDT86102LZ-NL |
Description | MOSFET 100V N-Channel PowerTrench MOSFET | ||
Manufacturer | ON Semiconductor | Fairchi | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-223-4 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 6.6 A | - | - |
Rds On Drain Source Resistance | 28 mOhms | - | - |
Qg Gate Charge | 17 nC | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.2 W | - | - |
Configuration | Single | - | - |
Tradename | PowerTrench | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.8 mm | - | - |
Length | 6.5 mm | - | - |
Series | FDT86102LZ | PowerTrenchR | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.5 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 26 S | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.003951 oz | 0.008826 oz | - |
Package Case | - | TO-261-4, TO-261AA | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-223-4 | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 1W | - |
Drain to Source Voltage Vdss | - | 100V | - |
Input Capacitance Ciss Vds | - | 1490pF @ 50V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 6.6A (Ta) | - |
Rds On Max Id Vgs | - | 28 mOhm @ 6.6A, 10V | - |
Vgs th Max Id | - | 3V @ 250μA | - |
Gate Charge Qg Vgs | - | 25nC @ 10V | - |
Pd Power Dissipation | - | 2.2 W | - |
Id Continuous Drain Current | - | 6.6 A | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Rds On Drain Source Resistance | - | 28 mOhms | - |
Qg Gate Charge | - | 17 nC | - |
Forward Transconductance Min | - | 26 S | - |