RGT8BM65DTL

Mfr. #:: RGT8BM65DTL
Manufacturer:: Rohm Semiconductor
Description:: IGBT Transistors 650V 4A IGBT Stop Trench
Lifecycle:: New from this manufacturer.
Datasheet:: RGT8BM65DTL Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: RGT8BM65DTL more Information

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-252-3

Mounting Style:: SMD/SMT

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.65 V

Maximum Gate Emitter Voltage:: 30 V

Continuous Collector Current at 25 C:: 8 A

Pd - Power Dissipation:: 62 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: RGT8BM65D

Packaging:: Reel

Continuous Collector Current Ic Max:: 8 A

Operating Temperature Range:: - 40 C to + 175 C

Brand:: ROHM Semiconductor

Continuous Collector Current:: 4 A

Gate-Emitter Leakage Current:: +/- 200 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2500

Subcategory:: IGBTs

Part # Aliases:: RGT8BM65D

Unit Weight:: 0.139332 oz

Tags: RGT8, RGT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

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RGT8BM65DTL Description

***p One Stop Global: Trans IGBT Chip N-CH 650V 8A 62000mW 3-Pin(2+Tab) CPT T/R

***ure Electronics: RGT8BM65D Series 650 V 8 A 62 W Field Stop Trench IGBT - TO-252-3

***i-Key: IGBT TRENCH FIELD 650V 8A TO252

***nell: IGBT, SINGLE, 650V, 8A, TO-252-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

*** Electronics: Trans IGBT Module N-CH 600V 8A Automotive 3-Pin(2+Tab) TO-252 T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 27pF 50volts C0G 1%

***nsix Microsemi: Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES

*** Electronic Components: IGBT Transistors IGBT PRODUCTS

***or: DISCRETE IGBT WITHOUT ANTI-PARAL

***ical: Trans IGBT Chip N-CH 600V 6A 3-Pin (2+Tab) DPAK T/R

***icontronic: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***inecomponents.com: POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL

***ser: IGBTs 6a, 600V N-Ch IGBT UFS Series

***ponent Stockers USA: 6 A 600 V N-CHANNEL IGBT TO-252AA

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 220pF 100volts C0G +/-5% Hi Rel

***r Electronics: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3.0 A

*** Electronic Components: IGBT Transistors N-Ch 600 Volt 3.0 A

***ical: Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA

***(Formerly Allied Electronics): IGBT, N-Channel, 600V, 8.5A, D-Pak TO-252AA | Infineon IRG4RC10KDTRPBF

***nell: IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns

***-Wing Technology: Tape & Reel (TR) Surface Mount ROHS3Compliant IGBT Transistor 2.6V @ 15V 5A 8.5A 38W 28ns

***ical: Trans IGBT Chip N-CH 600V 8.5A 38000mW 3-Pin(2+Tab) DPAK T/R

***(Formerly Allied Electronics): 600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF

***nell: IGBT, D-PAK; DC Collector Current: 8.5A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation Max: 38W; Pulsed Current Icm: 34A; Rise Time: 16ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

***ical: Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 3 A, 600 V low drop IGBT

***ure Electronics: STGD3NB60SD Series 600 V 3 A Surface Mount N-Channel PowerMESH IGBT - DPAK-3

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3 Amp

RGT8BM65DTL More Information

Field Stop Trench IGBTs: ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.

Market price

Part #	Mfg.	Description	Stock	Price
RGT8BM65DTL DISTI # RGT8BM65DTLTR-ND	ROHM Semiconductor	IGBT 650V 8A 62W TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.8680
RGT8BM65DTL DISTI # RGT8BM65DTLCT-ND	ROHM Semiconductor	IGBT 650V 8A 62W TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9260 500:$1.1176 250:$1.2772 100:$1.3602 25:$1.5964 10:$1.6920 1:$1.8800
RGT8BM65DTL DISTI # RGT8BM65DTLDKR-ND	ROHM Semiconductor	IGBT 650V 8A 62W TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9260 500:$1.1176 250:$1.2772 100:$1.3602 25:$1.5964 10:$1.6920 1:$1.8800
RGT8BM65DTL DISTI # RGT8BM65DTL	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R (Alt: RGT8BM65DTL) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.4779 500:€0.5149 100:€0.5579 50:€0.6079 25:€0.6689 10:€0.7439 1:€0.8369
RGT8BM65DTL DISTI # RGT8BM65DTL	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R - Tape and Reel (Alt: RGT8BM65DTL) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4479 15000:$0.4599 10000:$0.4869 5000:$0.5169 2500:$0.5519
RGT8BM65DTL DISTI # 755-RGT8BM65DTL	ROHM Semiconductor	IGBT Transistors 650V 4A IGBT Stop Trench RoHS: Compliant	1400	1:$1.8300 10:$1.5500 100:$1.2400 500:$1.0900 1000:$0.8990 2500:$0.8380 5000:$0.8070 10000:$0.7750
RGT8BM65DTL DISTI # 2519785	ROHM Semiconductor	IGBT, SINGLE, 650V, 8A, TO-252-3 RoHS: Compliant	0	1000:$1.4100 500:$1.7000 250:$1.9400 100:$2.0700 25:$2.4300 10:$2.5800 1:$2.8500
RGT8BM65DTL DISTI # IGBT1479	ROHM Semiconductor	IGBT650V8A30VDPack RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	2500:$0.7175 5000:$0.6733 7500:$0.6513
RGT8BM65DTL	ROHM Semiconductor		2500	1:¥14.2929 100:¥8.1041 1250:¥5.1380 2500:¥3.8278
RGT8BM65DTL	ROHM Semiconductor	IGBT Transistors 650V 4A IGBT Stop Trench RoHS: Compliant	Americas -

RGT8BM65DTL

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes