TGF2819-FS

TGF2819-FS
Mfr. #:
TGF2819-FS
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2819-FS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2819-FS more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
14.5 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V, 2 V
Id - Continuous Drain Current:
10.4 A
Output Power:
75 W
Maximum Drain Gate Voltage:
50 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 107 C
Pd - Power Dissipation:
52 W
Mounting Style:
SMD/SMT
Packaging:
Reel
Application:
S Band Radar and LTE base stations
Configuration:
Single
Operating Frequency:
3.5 GHz
Operating Temperature Range:
- 40 C to + 107 C
Brand:
Wolfspeed / Cree
Product Type:
RF JFET Transistors
Factory Pack Quantity:
250
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
TGF281, TGF28, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN
TGF2819-FS/FL RF Power Transistors
Qorvot TGF2819-FS/FL RF Power Transistors provide a greater-than 100W Peak (20W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Designed using TriQuint's proven TQGaN25HV process, the TGF2819-FS/FL RF Power Transistors offer advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The optimization features provided by TGF2819-FS/FL may potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Qorvo TGF2819-FS/FL RF Power Transistors are ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammers.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2819-FS
DISTI # 772-TGF2819-FS
QorvoRF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
RoHS: Compliant
0
  • 25:$316.7800
TGF2819-FS-EVB1
DISTI # 772-TGF2819-FS-EVB1
QorvoRF Development Tools DC-3.5GHz 32V GaN Eval Board
RoHS: Compliant
2
  • 1:$875.0000
Image Part # Description
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L

Thermal Interface Products Thermal Gap Fill Pad
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS-EVB1

Mfr.#: TGF2819-FS-EVB1

OMO.#: OMO-TGF2819-FS-EVB1-1152

RF Development Tools DC-3.5GHz 32V GaN Eval Board
TGF2819-FLPCB4B01

Mfr.#: TGF2819-FLPCB4B01

OMO.#: OMO-TGF2819-FLPCB4B01-1152

RF Development Tools
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L-LEADER-TECH

New and Original
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of TGF2819-FS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
25
$316.78
$7 919.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top