 |  |  | |
| PartNumber | TGF2819-FL | TGF2819-FS | TGF2819-FLPCB4B01 |
| Description | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | RF Development Tools |
| Manufacturer | MACOM | Cree, Inc. | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Technology | GaN Si | GaN | - |
| Packaging | Tray | Reel | - |
| Brand | MACOM | Wolfspeed / Cree | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 25 | 250 | - |
| Subcategory | Transistors | Transistors | - |
| Transistor Type | - | HEMT | - |
| Gain | - | 14.5 dB | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 150 V | - |
| Vgs Gate Source Breakdown Voltage | - | - 10 V, 2 V | - |
| Id Continuous Drain Current | - | 10.4 A | - |
| Output Power | - | 75 W | - |
| Maximum Drain Gate Voltage | - | 50 V | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 107 C | - |
| Pd Power Dissipation | - | 52 W | - |
| Mounting Style | - | SMD/SMT | - |
| Application | - | S Band Radar and LTE base stations | - |
| Configuration | - | Single | - |
| Operating Frequency | - | 3.5 GHz | - |
| Operating Temperature Range | - | - 40 C to + 107 C | - |
| Vgs th Gate Source Threshold Voltage | - | - 3 V | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Qorvo |
TGF2819-FL | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | |
| TGF2819-FS | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | ||
| TGF2819-FS | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | ||
| TGF2819-FL | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | ||
| TGF2819-FS-EVB1 | RF Development Tools DC-3.5GHz 32V GaN Eval Board | ||
| TGF2819-FLPCB4B01 | RF Development Tools |