IXKP20N60C5M

Mfr. #:: IXKP20N60C5M
Manufacturer:: Littelfuse
Description:: MOSFET 20 Amps 600V
Lifecycle:: New from this manufacturer.
Datasheet:: IXKP20N60C5M Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IXKP20N60C5M Datasheet IXKP20N60C5M Datasheet (P4)
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Product Attribute
Attribute Value

Manufacturer:: IXYS

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 7.6 A

Rds On - Drain-Source Resistance:: 200 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 33 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: COOLMOS

Packaging:: Tube

Series:: IXKP20N60

Transistor Type:: 1 N-Channel

Type:: CoolMOS Power MOSFET

Brand:: IXYS

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 50 ns

Typical Turn-On Delay Time:: 10 ns

Unit Weight:: 0.081130 oz

Tags: IXKP2, IXKP, IXK

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Email: info@omo-ic.com

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IXKP20N60C5M Description

***i-Key: MOSFET N-CH 600V 7.6A TO220ABFP

***S: new, original packaged

***el Nordic: Contact for details

***ical: Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 650V, 9A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 29W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ical: Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N-CH, 650V, 8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***p One Stop Global: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Bulk

***ark: Mosfet, N-Ch, 600V, 20A, To-220Fm; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ronik: N-CH 600V 20A 200mOhm TO220FP-3

***ure Electronics: Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS Power Mosfet - TO-220-3FP

*** Electronics: INFINEON SPA20N60C3 TransMOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP RoHS

***ponent Stockers USA: 20.7 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***roFlash: Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20.7 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 190 / Gate-Source Voltage V = 20 / Fall Time ns = 4.5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 67 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 34.5

***ment14 APAC: MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:690mJ; Current Iar:20A; Current Id Max:20.7A; Current Idss Max:1mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:190mohm; Package / Case:TO-220AB; Power Dissipation Pd:34.5W; Power Dissipation Pd:34.5W; Pulse Current Idm:62.1A; Rate of Voltage Change dv / dt:50V/µs; Repetitive Avalanche Energy Max:1mJ; Termination Type:Through Hole; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V; Voltage Vgs th Min:2.1V

***icroelectronics: N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP

*** Source Electronics: MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***enic: 600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Part #	Mfg.	Description	Stock	Price
IXKP20N60C5M DISTI # IXKP20N60C5M-ND	IXYS Corporation	MOSFET N-CH 600V 7.6A TO220FP RoHS: Compliant Min Qty: 50 Container: Tube	Temporarily Out of Stock	50:$3.9352

IXKP20N60C5M

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes