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FQP5N80

FQP5N80
Mfr. #:
FQP5N80
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 800V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQP5N80 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
4.8 A
Rds On - Drain-Source Resistance:
2.6 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
140 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
4.9 S
Fall Time:
40 ns
Product Type:
MOSFET
Rise Time:
60 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
55 ns
Typical Turn-On Delay Time:
22 ns
Part # Aliases:
FQP5N80_NL
Unit Weight:
0.050717 oz
Tags
FQP5N8, FQP5N, FQP5, FQP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 800V 4.8A TO-220
***ark
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:4.8A; Resistance, Rds On:2.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:4.8A; On State Resistance Max:2.6ohm; Package / Case:TO-220; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:19.2A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Part # Mfg. Description Stock Price
FQP5N80
DISTI # FQP5N80-ND		ON SemiconductorMOSFET N-CH 800V 4.8A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQP5N80
    DISTI # 512-FQP5N80    		ON SemiconductorMOSFET 800V N-Channel QFET
    RoHS: Compliant    		0
      FQP5N80_Q
      DISTI # 512-FQP5N80_Q      		ON SemiconductorMOSFET 800V N-Channel QFET
      RoHS: Not compliant      		0
        FQP5N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 4.8A I(D), 800V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Compliant        		8992
        • 1000:$0.8700
        • 500:$0.9100
        • 100:$0.9500
        • 25:$0.9900
        • 1:$1.0700
        FQP5N80Fairchild Semiconductor Corporation 154
          FQP5N80
          DISTI # 9845623          		ON SemiconductorMOSFET, N, TO-220
          RoHS: Compliant          		0
          • 1000:$1.0600
          • 500:$1.1300
          • 250:$1.3600
          • 100:$1.6100
          • 25:$2.2300
          • 1:$2.6600
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          Availability
          Stock:
          Available
          On Order:
          5500
          Enter Quantity:
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