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FQP55N10

FQP55N10
Mfr. #:
FQP55N10
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 100V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQP55N10 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
55 A
Rds On - Drain-Source Resistance:
26 mOhms
Vgs - Gate-Source Voltage:
25 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
155 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
QFET
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FQP55N10
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
38 S
Fall Time:
140 ns
Product Type:
MOSFET
Rise Time:
250 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
110 ns
Typical Turn-On Delay Time:
25 ns
Part # Aliases:
FQP55N10_NL
Unit Weight:
0.063493 oz
Tags
FQP55N1, FQP55, FQP5, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***a
    G***a
    RU

    Everything came

    2019-01-21
    I***v
    I***v
    KZ

    All OK

    2019-05-27
    I***v
    I***v
    RU

    The order came davolno quickly for a couple of weeks +-, but the trouble of the converter does not work adjustment of the current, opened the dispute money returned. Buying these modules regardless of the seller and the manufacturer (i know 2 types of this module) keep in mind that among them a lot of such marriage as in my copy. I already bought 3 such modules in different places and 2 of them did not work adjusting the current, and both non-working mozhulya were from different manufacturers (the modules differ between themselves by the presence of markers on the textile and clamping screws (this under the cross a more prized, with the inscription, under the slots but they do not work the same :-))

    2019-04-09
***emi
Power MOSFET, N-Channel, QFET®, 100 V, 55 A, 26 mΩ, TO-220
***et
Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 100 V 0.026 O Through Hole Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 100 V 23 mOhm Through Hole Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:57A; On State Resistance Max:23mohm; Package / Case:TO-220; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:228A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***eco
Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***id Electronics
Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF
***ter Electronics
MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***roFlash
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 100 V 25 mOhm 114 nC HEXFET® Power Mosfet - TO-220-3
***eco
IRFB59N10DPBF,MOSFET, 100V, 59 A, 25 MOHM, 76 NC QG, TO-220A
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***el Electronic
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***eco
Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB
***ure Electronics
N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***Yang
Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
***ark
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-220AB Rail
***peria
N-channel TrenchMOS standard level FET
***or
PFET, 47A I(D), 100V, 0.028OHM,
***et
Trans MOSFET N-CH 100V 44A 3-Pin(3+Tab) TO-220AB Rail
***ser
MOSFETs 44a, 100V, 0.030 Ohm N-Ch MOSFET
***ter Electronics
PWR MOS ULTRAFET 100V/41A/0.030 OHM N-CH
Part # Mfg. Description Stock Price
FQP55N10
DISTI # V79:2366_17794203		ON SemiconductorQF 100V 26MOHM TO220619
  • 10000:$0.7136
  • 5000:$0.7426
  • 2000:$0.7707
  • 1000:$0.8183
  • 500:$0.9317
  • 100:$1.0242
  • 10:$1.1759
  • 1:$1.2976
FQP55N10
DISTI # FQP55N10-ND		ON SemiconductorMOSFET N-CH 100V 55A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		138In Stock
  • 1000:$1.2470
  • 500:$1.5050
  • 100:$1.9350
  • 10:$2.4080
  • 1:$2.6700
FQP55N10
DISTI # 26637346		ON SemiconductorQF 100V 26MOHM TO22017000
  • 1000:$0.9112
FQP55N10
DISTI # 26118456		ON SemiconductorQF 100V 26MOHM TO220619
  • 500:$0.9317
  • 100:$1.0242
  • 19:$1.1759
FQP55N10
DISTI # FQP55N10		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP55N10)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.4769
  • 10:€1.2079
  • 25:€1.0329
  • 50:€0.9379
  • 100:€0.9229
  • 500:€0.9089
  • 1000:€0.8949
FQP55N10
DISTI # FQP55N10		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP55N10)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    FQP55N10
    DISTI # FQP55N10    		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP55N10)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 1000:$0.8879
    • 2000:$0.8819
    • 4000:$0.8709
    • 6000:$0.8599
    • 10000:$0.8389
    FQP55N10
    DISTI # 34C0501    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,55A I(D),TO-220 ROHS COMPLIANT: YES0
    • 1:$2.5000
    • 10:$2.0300
    • 100:$1.6500
    • 500:$1.4500
    • 1000:$1.2200
    • 2500:$1.1200
    • 10000:$1.0700
    FQP55N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		2000
    • 1000:$1.2100
    • 500:$1.2700
    • 100:$1.3300
    • 25:$1.3800
    • 1:$1.4900
    FQP55N10
    DISTI # 512-FQP55N10    		ON SemiconductorMOSFET 100V N-Channel QFET
    RoHS: Compliant    		1678
    • 1:$2.3100
    • 10:$1.9600
    • 100:$1.5700
    • 500:$1.3700
    • 1000:$1.1400
    • 2000:$1.0600
    • 5000:$1.0200
    FQP55N10
    DISTI # 6715149P    		ON SemiconductorMOSFET N-CHANNEL 100V 55A TO220AB, TU1310
    • 50:£1.3220
    • 100:£1.2160
    FQP55N10
    DISTI # 6715149    		ON SemiconductorMOSFET N-CHANNEL 100V 55A TO220AB, PK65
    • 5:£1.4360
    • 50:£1.3220
    • 100:£1.2160
    FQP55N10ON SemiconductorINSTOCK7939
      FQP55N10ON Semiconductor 7200
      • 1:$2.0200
      • 100:$1.2900
      • 500:$1.0700
      • 1000:$0.9800
      FQP55N10
      DISTI # C1S541901511580      		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		619
      • 500:$0.9110
      • 100:$1.0307
      • 10:$1.1743
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      Availability
      Stock:
      Available
      On Order:
      1984
      Enter Quantity:
      Current price of FQP55N10 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.90
      $1.90
      10
      $1.61
      $16.10
      100
      $1.29
      $129.00
      500
      $1.13
      $565.00
      1000
      $0.94
      $936.00
      2000
      $0.87
      $1 744.00
      5000
      $0.84
      $4 200.00
      10000
      $0.81
      $8 070.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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