STFH24N60M2

Mfr. #:: STFH24N60M2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
Lifecycle:: New from this manufacturer.
Datasheet:: STFH24N60M2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: STFH24N60M2 more Information STFH24N60M2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 18 A

Rds On - Drain-Source Resistance:: 168 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 30 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Packaging:: Tube

Series:: STFH24N60M2

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 15 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 920

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 60 ns

Typical Turn-On Delay Time:: 14 ns

Unit Weight:: 0.003527 oz

Tags: STFH, STF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STFH24N60M2 Description

***icroelectronics: N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

***ure Electronics: N-Channel 600 V 190 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N-CH, 600V, 18A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 30W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh, M2 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.20pF 50volts C0G +/-0.1pF

***ow.cn: Trans MOSFET N-CH 600V 19.3A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 600V, 19.3A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:19.3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R280CEXKSA1

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

*** Electronics: IPW60R190C6 Infineon MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6 Tube RoHS

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,20.2A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:151W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.2A; Power Dissipation Pd:151W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 600V, 15A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R380CEXKSA1

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

***icroelectronics: N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220

***-Wing Technology: STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V

***ure Electronics: Single N-Channel 600 V 0.285 Ohm 35 nC 110 W Flange Mount Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube

***ark: Mosfet, N Ch, 600V, 13A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; On Resistance Rds(On):0.26Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 13A 280m´Î@10V6.5A 25W 4V@250Ã×A N Channel TO-220FP-3WideCreepage MOSFETs ROHS

***nell: MOSFET, N-CH, 600V, 13A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP

*** Source Electronics: MOSFET N-CH 600V 13A TO-220FP / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube

*** Electronics: STF18NM60N STMicroelectronics MOSFET N-Channel 600V 0.27ohm 13A MDmesh TO220FP RoHS

***ure Electronics: N-Channel 600 V 285 mO 35 nC Flange Mount MDmesh II Power Mosfet - TO-220FP

***enic: 600V 13A 30W 285m´Î@10V6.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

STFH24N60M2 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

Part #	Mfg.	Description	Stock	Price
STFH24N60M2 DISTI # V79:2366_22741371	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	249	5000:$1.3146 2500:$1.4680 1000:$1.5119 500:$1.6346 100:$1.8420 10:$2.3339 1:$3.0090
STFH24N60M2 DISTI # V99:2348_17701881	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	245	5000:$1.3146 2500:$1.4680 1000:$1.5119 500:$1.6346 100:$1.8420 10:$2.3339 1:$3.0090
STFH24N60M2 DISTI # V36:1790_16518755	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	0
STFH24N60M2 DISTI # 497-16596-5-ND	STMicroelectronics	MOSFET N-CH 600V 18A TO220FP RoHS: Compliant Min Qty: 1 Container: Tube	144In Stock	5520:$1.3160 2760:$1.3324 920:$1.7272 100:$2.1023 25:$2.4676 10:$2.6160 1:$2.9100
STFH24N60M2 DISTI # 31081665	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	249	5000:$1.4689 2500:$1.5012 1000:$1.5935 500:$1.7572 100:$2.0120 10:$2.5089 6:$3.2347
STFH24N60M2 DISTI # 25954552	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	245	5000:$1.4689 2500:$1.5012 1000:$1.5935 500:$1.7572 100:$2.0120 10:$2.5089 6:$3.2347
STFH24N60M2 DISTI # STFH24N60M2	STMicroelectronics	Trans MOSFET N-CH 650V 18A 3-Pin TO-220FP Tube - Bulk (Alt: STFH24N60M2) Min Qty: 920 Container: Bulk	Americas - 0	2760:$1.1900 4600:$1.1900 9200:$1.1900 1840:$1.2900 920:$1.3900
STFH24N60M2 DISTI # 92Y9451	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	5000:$1.2300 2500:$1.2800 1000:$1.3700 500:$1.6600 100:$1.9000 10:$2.3700 1:$2.7900
STFH24N60M2 DISTI # 511-STFH24N60M2	STMicroelectronics	MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package RoHS: Compliant	1150	1:$2.7600 10:$2.3500 100:$1.8800 500:$1.6400 1000:$1.3600 2500:$1.2700 5000:$1.2200
STFH24N60M2 DISTI # 1241108P	STMicroelectronics	STMICROELECTRONICSMOSFETSTFH24N60M2, TU	840	50:£0.8740
STFH24N60M2 DISTI # 2602656	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP-3	0	500:£1.2700 250:£1.3600 100:£1.4500 10:£1.8300 1:£2.4200
STFH24N60M2 DISTI # 2602656	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP-3 RoHS: Compliant	0	2760:$2.1400 1840:$2.3000 920:$2.5000 100:$3.5600 10:$4.4300 1:$4.9000

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STFH24N60M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes