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FGY75N60SMD

FGY75N60SMD
Mfr. #:
FGY75N60SMD
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 600V, 75A Field Stop IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
FGY75N60SMD Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGY75N60SMD more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
Power-247
Mounting Style:
Through Hole
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
1.9 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
150 A
Pd - Power Dissipation:
750 W
Series:
FGY75N60SMD
Packaging:
Tube
Brand:
ON Semiconductor / Fairchild
Gate-Emitter Leakage Current:
400 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Unit Weight:
0.269105 oz
Tags
FGY7, FGY
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans IGBT Chip N-CH 600V 150A 428000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT,600V,75A,TO247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:428W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, AEC-Q101, 600V, TO247AB; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 378W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AB; No.
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 120A Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
600V/60A Field Stop IGBT Gen 2 - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital PowerGenerator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 107A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT50GN60 Series 600 V 107 A 325 nC NPT Trench and Field Stop IGBT - TO-247-3
***rochip
IGBT Fieldstop Low Frequency Single 600 V 50 A TO-247
***nsix Microsemi
Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***ical
Trans IGBT Chip N-CH 600V 140A 483000mW 3-Pin(3+Tab) TO-247AD Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***(Formerly Allied Electronics)
G6.2, 600V, 90A, CO-PAK-247AD | Infineon IRGP6690D-EPBF
***ineon
Benefits: Low VCE(ON) and switching losses; Optimized diode for full bridge hard switch converters; Square RBSOA and maximum junction temperature 175C; 5s short circuit SOA; Positive VCE(ON) temperature coefficient; Lead-free, RoHS compliant | Target Applications: Welding
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGY75N60 Field Stop IGBT
ON Semiconductor FGY75N60 Field Stop IGBT is a second generation IGBT that uses novel field stop IGBT technology and offers optimum performance. This IGBT feature high current capability, low saturation voltage, high input impedance, and fast switching. Typical applications include solar inverters, UPS, welders, and PFC applications.
Part # Mfg. Description Stock Price
FGY75N60SMD
DISTI # V99:2348_06359063		ON Semiconductor600V/75A FIELD STOP IGBT VER.250
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4240
  • 25:$5.1080
  • 10:$5.3540
  • 1:$6.5065
FGY75N60SMD
DISTI # V36:1790_06359063		ON Semiconductor600V/75A FIELD STOP IGBT VER.54
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4240
  • 25:$5.1080
  • 10:$5.3540
  • 1:$6.5065
FGY75N60SMD
DISTI # FGY75N60SMDFS-ND		ON SemiconductorIGBT 600V 150A 750W POWER-247
RoHS: Compliant
Min Qty: 1
Container: Tube		378In Stock
  • 2700:$3.5000
  • 900:$4.0688
  • 450:$4.4625
  • 25:$5.3812
  • 10:$5.6440
  • 1:$6.2500
FGY75N60SMD
DISTI # 32405190		ON Semiconductor600V/75A FIELD STOP IGBT VER.250
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4360
  • 25:$5.1080
  • 10:$5.3540
  • 2:$5.9150
FGY75N60SMD
DISTI # 31352222		ON Semiconductor600V/75A FIELD STOP IGBT VER.225
  • 150:$3.1442
  • 90:$3.1731
  • 60:$3.2143
  • 30:$3.2353
FGY75N60SMD
DISTI # 32401809		ON Semiconductor600V/75A FIELD STOP IGBT VER.54
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4360
  • 25:$5.1080
  • 10:$5.3540
  • 2:$5.9150
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube (Alt: FGY75N60SMD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 13610
  • 1000:€2.7900
  • 500:€3.0900
  • 100:€3.1900
  • 50:€3.2900
  • 25:€3.3900
  • 10:€3.5900
  • 1:€3.8900
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube - Rail/Tube (Alt: FGY75N60SMD)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 840
  • 300:$3.0864
  • 150:$3.1646
  • 90:$3.2051
  • 60:$3.2468
  • 30:$3.2680
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube - Bulk (Alt: FGY75N60SMD)
Min Qty: 90
Container: Bulk		Americas - 0
  • 900:$3.3900
  • 270:$3.4900
  • 450:$3.4900
  • 90:$3.5900
  • 180:$3.5900
FGY75N60SMD
DISTI # 88T3388		ON SemiconductorIGBT Single Transistor, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 RoHS Compliant: Yes2407
  • 500:$4.5300
  • 250:$4.9100
  • 100:$5.1000
  • 50:$5.4400
  • 25:$5.7800
  • 10:$6.0400
  • 1:$6.6100
FGY75N60SMD.
DISTI # 27AC5741		Fairchild Semiconductor CorporationFS2PIGBT TO247 75A 600V ROHS COMPLIANT: YES0
  • 300:$3.1300
  • 150:$3.2100
  • 62:$3.2500
  • 32:$3.2900
  • 1:$3.3100
FGY75N60SMD
DISTI # 512-FGY75N60SMD		ON SemiconductorIGBT Transistors 600V, 75A Field Stop IGBT
RoHS: Compliant		507
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 100:$4.4500
  • 250:$4.2600
  • 500:$3.8800
FGY75N60SMDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant		218
  • 1000:$3.6600
  • 500:$3.8500
  • 100:$4.0100
  • 25:$4.1800
  • 1:$4.5000
FGY75N60SMD
DISTI # 7599302		ON SemiconductorIGBT FIELD STOP 600V 150A 1.9V POWER-247, EA92
  • 15:£4.7400
  • 6:£5.0000
  • 1:£5.2600
FGY75N60SMD
DISTI # 7599302P		ON SemiconductorIGBT FIELD STOP 600V 150A 1.9V POWER-247, TU1138
  • 15:£4.7400
  • 6:£5.0000
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTransistor: IGBT,600V,75A,375W,TO247-312
  • 1:$8.9900
  • 5:$7.7400
  • 25:$6.2100
  • 100:$5.5800
FGY75N60SMD
DISTI # 2083380		ON SemiconductorIGBT, FIELD STOP, 600V,75A,POWER-247
RoHS: Compliant		2407
  • 500:$5.9700
  • 250:$6.5500
  • 100:$6.8500
  • 25:$7.8900
  • 10:$8.2800
  • 1:$9.1500
FGY75N60SMD
DISTI # 2083380		ON SemiconductorIGBT, FIELD STOP, 600V,75A,POWER-2472597
  • 500:£2.6600
  • 250:£2.9300
  • 100:£3.0600
  • 10:£3.5200
  • 1:£5.0200
FGY75N60SMD
DISTI # XSKDRABV0030436		ON SEMICONDUCTOR 
RoHS: Compliant		10210 in Stock0 on Order
  • 10210:$4.6800
  • 450:$5.0200
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Mfr.#: ST-LINK/V2

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Mfr.#: ST-LINK/V2

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Mfr.#: LM6172IMX/NOPB

OMO.#: OMO-LM6172IMX-NOPB-TEXAS-INSTRUMENTS

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Availability
Stock:
479
On Order:
2462
Enter Quantity:
Current price of FGY75N60SMD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.95
$5.95
10
$5.38
$53.80
25
$5.13
$128.25
100
$4.45
$445.00
250
$4.26
$1 065.00
500
$3.88
$1 940.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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