FQP5N8

FQP5N80 vs FQP5N80 PB vs FQP5N80,FQP5N80C

 
PartNumberFQP5N80FQP5N80 PBFQP5N80,FQP5N80C
DescriptionMOSFET 800V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current4.8 A--
Rds On Drain Source Resistance2.6 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.9 S--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time60 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time22 ns--
Part # AliasesFQP5N80_NL--
Unit Weight0.050717 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP5N80 MOSFET 800V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQP5N80 MOSFET N-CH 800V 4.8A TO-220
FQP5N80 PB New and Original
FQP5N80,FQP5N80C New and Original
FQP5N80,FQP5N80C,P5N80C, New and Original
FQP5N80,FQP5N90 New and Original
FQP5N80C New and Original
FQP5N80C,5N80C, New and Original
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