SEMIX352GB128DS

SEMIX352GB128DS
Mfr. #:
SEMIX352GB128DS
Manufacturer:
SEMIKRON
Description:
IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
Lifecycle:
New from this manufacturer.
Datasheet:
SEMIX352GB128DS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
SEMIX352, SEMIX35, SEMIX3, SEMIX, SEMI, SEM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
370A, 1200V, N-CHANNEL IGBT
***ark
Igbt Power Module; Transistor Polarity:n Channel; Dc Collector Current:377A; Collector Emitter Saturation Voltage Vce(On):2.35V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.15V; No. Of Pins:16Pins; Product Range:- Rohs Compliant: Yes
***nell
IGBT MODULE, 2X1200V; Transistor type:Dual SPT IGBT; Voltage, Vces:1200V; Current, Ic continuous a max:370A; Voltage, Vce sat max:2.35V; Case style:SEMiX 2s; Current, Ic av:370A; Current, Icm pulsed:400A; Current, Ifs max:2000A; Termination Type:Screw; Time, rise:55ns; Transistor polarity:N; Voltage, Vceo:1.15V; Voltage, Vrrm:1200V
Part # Mfg. Description Stock Price
SEMIX352GB128DS
DISTI # 16M0113
SEMIKRONIGBT POWER MODULE,Transistor Polarity:N Channel,DC Collector Current:377A,Collector Emitter Saturation Voltage Vce(on):2.35V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.15V,No. of Pins:16Pins,Product Range:- RoHS Compliant: Yes0
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    SEMIX352GB128DS

    Mfr.#: SEMIX352GB128DS

    OMO.#: OMO-SEMIX352GB128DS-1190

    IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
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    Mfr.#: SEMIX353GB126HDS

    OMO.#: OMO-SEMIX353GB126HDS-1190

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    Mfr.#: SEMIX353GB126V1

    OMO.#: OMO-SEMIX353GB126V1-1190

    New and Original
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    OMO.#: OMO-SEMIX353GB128DS-1190

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    OMO.#: OMO-SEMIX353GB176HDS-1190

    New and Original
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    Mfr.#: SEMIX353GD126HDC

    OMO.#: OMO-SEMIX353GD126HDC-1190

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    Mfr.#: SEMIX353GD126HDS

    OMO.#: OMO-SEMIX353GD126HDS-1190

    New and Original
    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of SEMIX352GB128DS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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