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UF3C120150K4S

UF3C120150K4S
Mfr. #:
UF3C120150K4S
Manufacturer:
UnitedSiC
Description:
MOSFET 1200V 150mOhm SiC FAST CASCODE G3
Lifecycle:
New from this manufacturer.
Datasheet:
UF3C120150K4S Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
UF3C120150K4S more Information
Product Attribute
Attribute Value
Manufacturer:
UnitedSiC
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-247-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1.2 kV
Id - Continuous Drain Current:
18.4 A
Rds On - Drain-Source Resistance:
330 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
25.7 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
166.7 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Tube
Series:
UF3C
Transistor Type:
1 N-Channel
Brand:
UnitedSiC
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
21 ns
Tags
UF3C1, UF3C, UF3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
UF3C High-Performance SiC FETs
United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. The F3 SiC fast JFETs series exhibits very fast switching using a TO-247, or D2PAK-3L package. Each device features the best reverse recovery characteristics of any device of similar ratings.
Image Part # Description
UF3C120040K4S

Mfr.#: UF3C120040K4S

OMO.#: OMO-UF3C120040K4S

 MOSFET 1200V 35m? SiC Cascode Fast
UF3C120040K3S

Mfr.#: UF3C120040K3S

OMO.#: OMO-UF3C120040K3S

 MOSFET 35mOhm 1200V 65A SiC Cascode Fast
UF3C120080K4S

Mfr.#: UF3C120080K4S

OMO.#: OMO-UF3C120080K4S

 MOSFET 1200V 80m? SiC Cascode Fast
UF3C120150K4S

Mfr.#: UF3C120150K4S

OMO.#: OMO-UF3C120150K4S

 MOSFET 1200V 150mOhm SiC FAST CASCODE G3
Availability
Stock:
30
On Order:
2013
Enter Quantity:
Current price of UF3C120150K4S is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$22.09
$22.09
5
$21.10
$105.50
10
$20.44
$204.40
25
$18.78
$469.50
50
$18.34
$917.00
100
$17.45
$1 745.00
250
$16.02
$4 005.00
500
$15.24
$7 620.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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