IPB80N08S2L-07

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

75 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

4.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

233 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Fall Time:

22 ns

Product Type:

MOSFET

Rise Time:

55 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

85 ns

Typical Turn-On Delay Time:

19 ns

Part # Aliases:

IPB80N08S2L07ATMA1 IPB8N8S2L7XT SP000219051

Unit Weight:

0.139332 oz

Tags

IPB80N08S2L, IPB80N08S2, IPB80N08, IPB80N0, IPB80N, IPB8, IPB