FDC6432SH

Mfr. #:: FDC6432SH
Manufacturer:: ON Semiconductor
Description:: MOSFET N/P-CH 30V/12V SSOT-6
Lifecycle:: New from this manufacturer.
Datasheet:: FDC6432SH Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: FDC6432SH Datasheet FDC6432SH Datasheet (P4-P6)FDC6432SH Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Tags: FDC643, FDC64, FDC6, FDC

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Vacuum Packaging with PL

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FDC6432SH Description

***ical: Trans MOSFET N/P-CH 30V/12V 2.4A/2.5A 6-Pin SuperSOT T/R

***Yang: 12V, P-CH MOSFET,30V, SYNCFET, POWER TRENCH, SSOT6 - Bulk

***ser: MOSFETs 12V P-Channel PowerTrench

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

***eco: Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT

***ure Electronics: P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

***el Electronic: Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402

***nell: MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V

***Yang: Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes

***rchild Semiconductor: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

***et Europe: Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin TSOT-23 T/R

***ure Electronics: Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6

***r Electronics: Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

***icroelectronics: P-channel 20 V, 0.087 Ohm typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package

***ure Electronics: P-Channel 20 V 0.1 O 1.6 W SMT STripFET H7 Power Mosfet - SOT-23-6

***ical: Trans MOSFET P-CH 30V 3A 6-Pin SOT-23 T/R

***i-Key: MOSFET N-CH 20V 3A SSOT-6

***ser: MOSFETs 20V N-Ch 1.8V Spec PowerTrench

***et: N-Channel 20V 3A (Ta) Surface Mount 6-SSOT

***i-Key: MOSFET 2P-CH 20V 1.9A SSOT6

***i-Key Marketplace: SMALL SIGNAL P-CHANNEL MOSFET

***ser: MOSFETs 20V, Dual, P-Channel

Market price

Part #	Mfg.	Description	Stock	Price
FDC6432SH DISTI # FDC6432SH-ND	ON Semiconductor	MOSFET N/P-CH 30V/12V SSOT-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDC6432SH DISTI # 512-FDC6432SH	ON Semiconductor	MOSFET 12V P-Channel PowerTrench RoHS: Compliant	0
FDC6432SH	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	78908	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900

Image	Part #	Description
	Mfr.#: FDC637AN OMO.#: OMO-FDC637AN	MOSFET SSOT-6 N-CH 20V
	Mfr.#: FDC6401N OMO.#: OMO-FDC6401N	MOSFET Dual N-Ch 2.5V Spec Power Trench
	Mfr.#: FDC653N OMO.#: OMO-FDC653N	MOSFET SSOT-6 N-CH 30V
	Mfr.#: FDC6303C OMO.#: OMO-FDC6303C-1190	New and Original
	Mfr.#: FDC6329 OMO.#: OMO-FDC6329-1190	New and Original
	Mfr.#: FDC6329L/329 OMO.#: OMO-FDC6329L-329-1190	New and Original
	Mfr.#: FDC6332C OMO.#: OMO-FDC6332C-1190	New and Original
	Mfr.#: FDC640P(Q) OMO.#: OMO-FDC640P-Q--1190	New and Original
	Mfr.#: FDC645N-NL OMO.#: OMO-FDC645N-NL-1190	New and Original
	Mfr.#: FDC654P / 654 OMO.#: OMO-FDC654P-654-1190	New and Original

FDC6432SH

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes