FDC6432SH Datasheet FDC6432SH | P4-P6

FDC6432SH Rev B (W)

Typical Characteristics : Q1

0

2

4

6

8

0123

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

V

GS

= 10V

6.0V

3.0V

3.5V

4.5V

2.5V

0.8

1

1.2

1.4

1.6

1.8

02468

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 3.0V

4.5V

6.0V

4.0V

10V

5.0V

3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 2.4A

V

GS

= 10V

0.05

0.1

0.15

0.2

0.25

0.3

246810

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 1.2A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

1

2

3

4

5

6

7

11.522.533.5

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= 5V

0.001

0.01

0.1

1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6432SH

FDC6432SH Rev B (W)

Typical Characteristics : Q1

0

2

4

6

8

10

012345

Q

g

, GATE CHARGE (nC)

V

GS

, GATE-SOURCE VOLTAGE (V)

I

D

= 2.4A

V

DS

= 10V

15V

20V

0

100

200

300

400

0 5 10 15 20 25 30

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C

iss

C

oss

f = 1 MHz

V

GS

= 0 V

C

rss

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

DC

10s

1s

100ms

100

µ

s

R

DS(ON)

LIMIT

V

GS

= 10V

SINGLE PULSE

R

θ

JA

= 175

o

C/W

T

A

= 25

o

C

10ms

1ms

0

2

4

6

8

10

0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θJA

= 175°C/W

T

A

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

R

θ

JA

(t) = r(t) * R

θ

JA

R

θ

JA

= 175

o

C/W

T

J

- T

A

= P * R

θ

JA

(t)

Duty Cycle, D = t

1

/ t

2

P

(p

k

)

t

1

t

2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDC6432SH

FDC6432SH Rev B (W)

Typical Characteristics : Q2

0

1

2

3

4

5

6

7

8

00.511.522.5

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

V

GS

= -4.5V

-3.5V

-3.0V

-1.8V

-2.0V

-2.5V

-1.5V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

012345678

-I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

=-1.8V

-3.0V

-2.5V

-3.5V

-4.5V

-2.0V

Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with

Drain Current and Gate Voltage.

0.8

0.9

1

1.1

1.2

1.3

1.4

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= -2.5A

V

GS

= -4.5V

0.05

0.09

0.13

0.17

0.21

0.25

0.29

12345

-V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= -1.3A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 14. On-Resistance Variation with

Temperature.

Figure 15. On-Resistance Variation with

Gate-to-Source Voltage.

0

1

2

3

4

5

6

7

8

0.5 1 1.5 2 2.5

-V

GS

, GATE TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= -5V

0.0001

0.001

0.01

0.1

1

10

00.20.40.60.811.2

-V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

-I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6432SH

FDC6432SH

FDC6432SH

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