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FDC6432SH

P1-P3P4-P6P7-P8
April 2003
2003 Fairchild Semiconductor Corp.
FDC6432SH Rev B (W)
FDC6432SH
12V P-Channel PowerTrench
MOSFET, 30V PowerTrench
SyncFET
General Description
This complementary P-Channel MOSFET with
SyncFET has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM
controllers. It has been optimized for providing an
extremely low R
DS(ON)
in a small package.
Applications
DC/DC converter
Power management
Features
• SyncFET R
DS(ON)
= 90 mΩ @ V
GS
= 10 V
2.4 A, 30V R
DS(ON)
= 105 mΩ @ V
GS
= 4.5 V
• P channel R
DS(ON)
= 90 mΩ @ V
GS
= –4.5 V
–2.5 A, –12V R
DS(ON)
= 125 mΩ @ V
GS
= –2.5 V
R R
DS(ON)
= 220 mΩ @ V
GS
= –1.8 V
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
Pin 1
SuperSOT™-6
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
Q1 (N) Q2 (P)
V
DSS
Drain-Source Voltage 30 –12 V
V
GSS
Gate-Source Voltage ±16 ±8 V
I
D
Drain Current– Continuous (Note 1a) 2.4 –2.5 A
– Pulsed 7 –7
Power Dissipation for Single Operation (Note 1a) 1.3
P
D
(Note 1b)
0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 100
°C/W
(Note 1b)
175
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 60
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.432 FDC6432SH 7’’ 8mm 3000 units
FDC6432SH
3
2
1
4
5
6
Q1(N)
Q2(P)
D1,2
S1
D1
,
2
G2
S2
G1
FDC6432SH Rev B (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Q Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= –250 µA
Q1
Q2
30
–12
V
∆BVDSS
∆T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 1 mA, Ref to 25°C
I
D
= –250 µA, Ref to 25°C
Q1
Q2
25
–10
mV/°C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 24 V, V
GS
= 0 V
V
DS
= –10 V, V
GS
= 0 V
Q1
Q2
500
1
µA
I
GSS
Gate-Body Leakage
V
GS
= ±16 V, V
DS
= 0 V
V
GS
= ±8 V, V
DS
= 0 V
Q1
Q2
±100
±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= –250 µA
Q1
Q2
1
–0.4
1.5
–0.7
3
–1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Ref to 25°C
I
D
= –250 µA, Ref to 25°C
Q1
Q2
–7
3
mV/°C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 2.4A
V
GS
= 4.5V, I
D
= 2.2A
V
GS
=10V,I
D
=2.4A,T
J
=125°C
Q1
75
85
100
90
105
140
mΩ
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= –4.5V, I
D
= –2.5A
V
GS
= –2.5V, I
D
= –2.0A
V
GS
= –1.8V, I
D
= –1.6A
V
GS
=–4.5V,I
D
=2.5A,T
J
=125°C
Q2
75
97
154
86
90
125
220
120
mΩ
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 1 mA
V
DS
= –5 V I
D
= –2.5A
Q1
Q2
7
7
S
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz
Q1
Q2
5
13
Ω
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
270
514
pF
C
oss
Output Capacitance
Q1
Q2
50
234
pF
C
rss
Reverse Transfer Capacitance
For Q1:
V
DS
=15V, V
GS
=0V, f=1MHz
For Q2:
V
DS
= –6V, V
GS
=0V, f=1MHz
Q1
Q2
20
167
pF
Switching Characteristics (Note 2)
td(on) Turn-on Delay Time
Q1
Q2
5
13
10
23
ns
tr Turn-on Rise Time
Q1
Q2
8
12
16
22
ns
td(off) Turn-off Delay Time
Q1
Q2
18
22
32
35
ns
tf Turn-off Fall Time
For Q1:
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
For Q2:
V
DS
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6 Ω
Q1
Q2
1.2
29
2.4
46
ns
Qg Total Gate Charge
Q1
Q2
2.5
5.7
3.5
8
nC
Qgs Gate-Source Charge
Q1
Q2
0.7
1.2
nC
Qgd Gate-Drain Charge
For Q1:
V
DS
= 15 V, I
D
= 2.4 A,
V
GS
= 5 V
For Q2:
V
DS
= –10 V, I
D
= –2.5 A,
V
GS
= –4.5 V
Q1
Q2
0.6
1.7
nC
FDC6432SH
FDC6432SH Rev B (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Q Min Typ Max Units
Drain-Source Diode Characteristics
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.7A, Note 2
V
GS
= 0 V, I
S
= –0.8A, Note 2
Q1
Q2
0.6
–0.7
700
1200
mV
t
RR
Reverse Recovery Time
Q1
Q2
10
24
ns
I
RM
Maximum Reverse Recovery
Current
Q1
Q2
0.8
–0.5
A
Q
RR
Reverse Recovery Charge
For Q1:
IF = 2.4A, dIF/dt = 300A/µs
For Q2:
IF = –2.5A, dIF/dt = 100A/µs
Q1
Q2
4
6
nC
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 100°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 175°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC6432SH
P1-P3P4-P6P7-P8

FDC6432SH

Mfr. #:
Buy FDC6432SH
Manufacturer:
ON Semiconductor
Description:
MOSFET N/P-CH 30V/12V SSOT-6
Lifecycle:
New from this manufacturer.
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