DMN3112S-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

5.8 A

Rds On - Drain-Source Resistance:

92 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.9 V

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.4 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1 mm

Length:

2.9 mm

Product:

MOSFET Small Signal

Series:

DMN3112S

Transistor Type:

1 N-Channel

Width:

1.3 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

4.7 S

Product Type:

MOSFET

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Unit Weight:

0.000282 oz

Tags

DMN3112, DMN311, DMN31, DMN3, DMN