FDG313N

Mfr. #:: FDG313N
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET SC70-6 N-CH 25V
Lifecycle:: New from this manufacturer.
Datasheet:: FDG313N Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-323-6

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 950 mA

Rds On - Drain-Source Resistance:: 350 mOhms

Vgs - Gate-Source Voltage:: 8 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 750 mW

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.1 mm

Length:: 2 mm

Product:: MOSFET Small Signal

Series:: FDG313N

Transistor Type:: 1 N-Channel

Type:: FET

Width:: 1.25 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 1.5 S

Fall Time:: 8.5 ns

Product Type:: MOSFET

Rise Time:: 8.5 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 17 ns

Typical Turn-On Delay Time:: 3 ns

Part # Aliases:: FDG313N_NL

Unit Weight:: 0.000988 oz

Tags: FDG313, FDG31, FDG3, FDG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDG313N Description

***ure Electronics: N-Channel 25 V 450 mOhm Surface Mount Digital FET Mosfet - SC-70-6

*** Electronics: FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV

***ment14 APAC: MOSFET, N, SMD, 6-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:950mA; Package / Case:SC-70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

***ser: MOSFETs- Power and Small Signal 25V 1.2A N-Channel No-Cancel/No-Return

***ponent Stockers USA: 1000 mA 25 V N-CHANNEL Si SMALL SIGNAL MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 25V 1A SC88/SC70-6

***r Electronics: Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 25V 1.2A N-Channel

***or: MOSFET N-CH 25V 1A SC88/SC70-6

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V

***rchild Semiconductor: This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***ark: MOSFET, N CH, 20V, 0.29OHM, 970mA, SOT-416-3; Transistor Polarity:N Channel; Con

***ure Electronics: N-Channel 20 V 350 mOhm 0.72 nC SMT TrenchMOS Low Level FET - SC-75

***ical: Trans MOSFET N-CH 20V 0.97A 3-Pin SC-75 T/R

***ponent Stockers USA: 970 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET

***peria: N-channel TrenchMOS extremely low level FET

***ure Electronics: Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R

***ser: Transistor - FET N-Channel 20V 1.2A

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***ark: Mosfet Bvdss: 8V~24V Sc59 T&r 3K

***(Formerly Allied Electronics): N-Channel Enhancement Mode FET SC-59

***ment14 APAC: MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V

***el Electronic: DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V

***nell: MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available

***ark: MOSFET, N CHANNEL, 30V, 1.1A, SC-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
FDG313N DISTI # FDG313NFSTR-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDG313N DISTI # FDG313NFSCT-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDG313N DISTI # FDG313NFSDKR-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDG313N_D87Z DISTI # FDG313N_D87Z-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Limited Supply - Call
FDG313N DISTI # FDG313N	ON Semiconductor	Trans MOSFET N-CH 25V 0.95A 6-Pin SC-70 T/R - Bulk (Alt: FDG313N) RoHS: Compliant Min Qty: 1087 Container: Bulk	Americas - 0	10870:$0.2829 5435:$0.2909 3261:$0.2939 2174:$0.2979 1087:$0.2999
FDG313N DISTI # 512-FDG313N	ON Semiconductor	MOSFET SC70-6 N-CH 25V RoHS: Compliant	0
FDG313N_D87Z DISTI # 512-FDG313N_D87Z	ON Semiconductor	MOSFET SC70-6 N-CH 25V RoHS: Compliant	0
FDG313N	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 0.95A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1655418	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700
FDG313N	Fairchild Semiconductor Corporation	950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000	1112:$0.1400 223:$0.1800 1:$0.4000
FDG313N DISTI # 8063371P	ON Semiconductor	MOSFETFAIRCHILDFDG313N, RL	260	200:£0.1280
FDG313N	Fairchild Semiconductor Corporation		5521
FDG313N	Fairchild Semiconductor Corporation		5609
FDG313N	Fairchild Semiconductor Corporation		2617
FDG313N DISTI # 1471044	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	1	500:£0.2010 250:£0.2200 100:£0.2390 10:£0.4130 1:£0.5120
FDG313N DISTI # 1471044RL	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	0	1:$1.1100
FDG313N DISTI # 1471044	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	0	1:$1.1100

Image	Part #	Description
	Mfr.#: FDG.1B.307.CLAD42 OMO.#: OMO-FDG-1B-307-CLAD42-LEMO	Circular Push Pull Connectors STRAIGHT PLUG LONG VERSION
	Mfr.#: FDG316P OMO.#: OMO-FDG316P-ON-SEMICONDUCTOR	MOSFET P-CH 30V 1.6A SC70-6
	Mfr.#: FDG6304P-LF OMO.#: OMO-FDG6304P-LF-1190	New and Original
	Mfr.#: FDG6318PZ OMO.#: OMO-FDG6318PZ-ON-SEMICONDUCTOR	MOSFET 2P-CH 20V 0.5A SC70-6
	Mfr.#: FDG6318PZ-NL OMO.#: OMO-FDG6318PZ-NL-1190	New and Original
	Mfr.#: FDG6321C-NL OMO.#: OMO-FDG6321C-NL-1190	New and Original
	Mfr.#: FDG6342L-NL OMO.#: OMO-FDG6342L-NL-1190	New and Original
	Mfr.#: FDGB0037A OMO.#: OMO-FDGB0037A-1190	New and Original
	Mfr.#: FDG6301N-CUT TAPE OMO.#: OMO-FDG6301N-CUT-TAPE-1190	New and Original
	Mfr.#: FDG6321C-CUT TAPE OMO.#: OMO-FDG6321C-CUT-TAPE-1190	New and Original

FDG313N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes