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IXFK30N100Q2

IXFK30N100Q2
Mfr. #:
IXFK30N100Q2
Manufacturer:
Littelfuse
Description:
MOSFET 30 Amps 1000V 0.35 Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXFK30N100Q2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-264-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1 kV
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
400 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
735 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HyperFET
Packaging:
Tube
Height:
26.16 mm
Length:
19.96 mm
Series:
IXFK30N100
Transistor Type:
1 N-Channel
Width:
5.13 mm
Brand:
IXYS
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
22 ns
Unit Weight:
0.352740 oz
Tags
IXFK30N, IXFK30, IXFK3, IXFK, IXF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 1KV 30A 3-Pin(3+Tab) TO-264AA
***ark
Mosfet, N, To-264; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:30A; On Resistance Rds(On):0.4Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:735W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-264; No. of Pins:3; Avalanche Single Pulse Energy Eas:4J; Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:186nC; No. of Transistors:1; On State Resistance Max:400mohm; Package / Case:TO-264; Power Dissipation Pd:735W; Power Dissipation Pd:735W; Pulse Current Idm:120A; Rate of Voltage Change dv / dt:20V/ns; Repetitive Avalanche Energy Max:60mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Weight:0.00001kg
Part # Mfg. Description Stock Price
IXFK30N100Q2
DISTI # IXFK30N100Q2-ND		IXYS CorporationMOSFET N-CH 1000V 30A TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$31.7340
IXFK30N100Q2
DISTI # 747-IXFK30N100Q2		IXYS CorporationMOSFET 30 Amps 1000V 0.35 Rds
RoHS: Compliant		0
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    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of IXFK30N100Q2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $33.94
    $33.94
    5
    $32.24
    $161.20
    10
    $31.40
    $314.00
    25
    $28.85
    $721.25
    50
    $27.62
    $1 381.00
    100
    $26.81
    $2 681.00
    250
    $24.61
    $6 152.50
    500
    $23.42
    $11 710.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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