PartNumber | IXFK300N20X3 | IXFK30N100Q2 | IXFK320N17T2 |
Description | MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm | MOSFET 30 Amps 1000V 0.35 Rds | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | TO-264 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 1 kV | - |
Id Continuous Drain Current | 300 A | 30 A | - |
Rds On Drain Source Resistance | 4 mOhms | 400 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 20 V | 30 V | - |
Qg Gate Charge | 375 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 1250 W | 735 W | 1670 W |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HyperFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | X3-Class | IXFK30N100 | IXFK320N17 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 80 S | - | - |
Fall Time | 13 ns | 10 ns | 230 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 43 ns | 14 ns | 170 ns |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 184 ns | 60 ns | - |
Typical Turn On Delay Time | 44 ns | 22 ns | - |
Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |
Height | - | 26.16 mm | - |
Length | - | 19.96 mm | - |
Width | - | 5.13 mm | - |
Product | - | - | MOSFET Gate Drivers |