OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXFK360N15T2

IXFK360N15T2
Mfr. #:
IXFK360N15T2
Manufacturer:
Littelfuse
Description:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXFK360N15T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFK360N15T2 more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
FETs - Single
Series
GigaMOS
Product
MOSFET Gate Drivers
Type
GigaMOS Trench T2 HiperFet
Packaging
Tube
Unit-Weight
0.352740 oz
Mounting-Style
Through Hole
Tradename
HiPerFET
Package-Case
TO-264
Operating-Temperature
-55°C ~ 175°C (TJ)
Mounting-Type
Through Hole
Supplier-Device-Package
TO-264AA (IXFK)
Number-of-Outputs
1
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
1670W
Drain-to-Source-Voltage-Vdss
150V
Input-Capacitance-Ciss-Vds
47500pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
360A (Tc)
Rds-On-Max-Id-Vgs
4 mOhm @ 60A, 10V
Vgs-th-Max-Id
5V @ 8mA
Gate-Charge-Qg-Vgs
715nC @ 10V
Pd-Power-Dissipation
1670 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Output-Voltage
150 V
Operating-Supply-Current
100 A
Output-Current
360 A
Fall-Time
265 ns
Rise-Time
170 ns
Number-of-Drivers
1 Driver
Maximum-Turn-Off-Delay-Time
115 ns
Maximum-Turn-On-Delay-Time
50 ns
Tags
IXFK36, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Part # Mfg. Description Stock Price
IXFK360N15T2
DISTI # V99:2348_15877642		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264
RoHS: Compliant		10
  • 500:$12.9500
  • 250:$14.6800
  • 100:$16.8900
  • 50:$17.3200
  • 25:$18.6400
  • 10:$19.8000
  • 5:$20.9200
  • 1:$21.5400
IXFK360N15T2
DISTI # IXFK360N15T2-ND		IXYS CorporationMOSFET N-CH 150V 360A TO264
RoHS: Compliant
Min Qty: 1
Container: Tube		225In Stock
  • 100:$18.4749
  • 25:$19.8780
  • 1:$23.3900
IXFK360N15T2
DISTI # 27544695		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264
RoHS: Compliant		10
  • 10:$19.8000
  • 5:$20.9200
  • 1:$21.5400
IXFK360N15T2
DISTI # 747-IXFK360N15T2		IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		199
  • 1:$24.4500
  • 5:$23.9000
  • 10:$22.6200
  • 25:$21.2600
  • 50:$19.6700
  • 100:$19.3100
  • 250:$16.4800
  • 500:$14.3500
IXFK360N15T2
DISTI # C1S331700025102		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264
RoHS: Compliant		10
  • 10:$19.9800
  • 1:$21.4800
Image Part # Description
IXFK360N15T2

Mfr.#: IXFK360N15T2

OMO.#: OMO-IXFK360N15T2

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK360N10T

Mfr.#: IXFK360N10T

OMO.#: OMO-IXFK360N10T

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFK36N60P

Mfr.#: IXFK36N60P

OMO.#: OMO-IXFK36N60P

 MOSFET 600V 36A
IXFK36N60

Mfr.#: IXFK36N60

OMO.#: OMO-IXFK36N60

 MOSFET 600V 36A
IXFK360N15T2

Mfr.#: IXFK360N15T2

OMO.#: OMO-IXFK360N15T2-IXYS-CORPORATION

 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK360N10T

Mfr.#: IXFK360N10T

OMO.#: OMO-IXFK360N10T-IXYS-CORPORATION

 MOSFET N-CH 100V 360A TO-264
IXFK36N60P

Mfr.#: IXFK36N60P

OMO.#: OMO-IXFK36N60P-IXYS-CORPORATION

 IGBT Transistors MOSFET 600V 36A
IXFK36N60

Mfr.#: IXFK36N60

OMO.#: OMO-IXFK36N60-IXYS-CORPORATION

 MOSFET 600V 36A
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of IXFK360N15T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$19.42
$19.42
10
$18.45
$184.54
100
$17.48
$1 748.25
500
$16.51
$8 255.65
1000
$15.54
$15 540.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top