IXFK36

IXFK360N15T2 vs IXFK360N10T vs IXFK36N60

 
PartNumberIXFK360N15T2IXFK360N10TIXFK36N60
DescriptionMOSFET GigaMOS Trench T2 HiperFET PWR MOSFETMOSFET TRENCH HIPERFET PWR MOSFET 100V 360AMOSFET 600V 36A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264TO-264-3TO-264-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
Pd Power Dissipation1670 W1.25 kW500 W
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
ProductMOSFET Gate Drivers--
SeriesIXFK360N15IXFK360N10IXFK36N60
BrandIXYSIXYSIXYS
Fall Time265 ns160 ns60 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time170 ns100 ns45 ns
Factory Pack Quantity252525
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.352740 oz0.264555 oz0.352740 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-100 V600 V
Id Continuous Drain Current-360 A36 A
Rds On Drain Source Resistance-2.9 mOhms180 mOhms
Vgs th Gate Source Threshold Voltage-4.5 V-
Vgs Gate Source Voltage-20 V20 V
Qg Gate Charge-525 nC-
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Transistor Type-1 N-Channel1 N-Channel
Forward Transconductance Min-180 S36 S
Typical Turn Off Delay Time-80 ns100 ns
Typical Turn On Delay Time-47 ns30 ns
Height--26.16 mm
Length--19.96 mm
Width--5.13 mm
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFK360N15T2 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK360N10T MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFK36N60P MOSFET 600V 36A
IXFK36N60 MOSFET 600V 36A
IXFK360N15T2 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK360N10T MOSFET N-CH 100V 360A TO-264
IXFK36N60P IGBT Transistors MOSFET 600V 36A
IXFK36N60 MOSFET 600V 36A
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