SQD100N04_3M6T4GE3

Mfr. #:: SQD100N04_3M6T4GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 40V Vds 20V Vgs TO-252
Lifecycle:: New from this manufacturer.
Datasheet:: SQD100N04_3M6T4GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SQD100N04_3M6T4GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 3.6 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 105 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 136 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: TrenchFET

Series:: SQ

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 120 S

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 1

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 34 ns

Typical Turn-On Delay Time:: 11 ns

Tags: SQD100N04-3, SQD100N04, SQD100N, SQD100, SQD10, SQD1, SQD

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SQD100N04_3M6T4GE3 More Information

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Related products

Image	Part #	Description
	Mfr.#: SQD100N04-3m6_GE3 OMO.#: OMO-SQD100N04-3M6-GE3-0DC	MOSFET N-Channel 40V AEC-Q101 Qualified
	Mfr.#: SQD100N04-3m6L_GE3 OMO.#: OMO-SQD100N04-3M6L-GE3-039	MOSFET N-Channel 40V AEC-Q101 Qualified
	Mfr.#: SQD100N04_3M6T4GE3 OMO.#: OMO-SQD100N04-3M6T4GE3	MOSFET 40V Vds 20V Vgs TO-252
	Mfr.#: SQD100N04-3M6-GE3 OMO.#: OMO-SQD100N04-3M6-GE3-57C	MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3
	Mfr.#: SQD100N04-3M6L-GE3 OMO.#: OMO-SQD100N04-3M6L-GE3-678	MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE
	Mfr.#: SQD100N04-3M6L-GE3 OMO.#: OMO-SQD100N04-3M6L-GE3-126	IGBT Transistors MOSFET N-Channel 40V Automotive MOSFET
	Mfr.#: SQD100N04-3M6L_GE3 OMO.#: OMO-SQD100N04-3M6L-GE3-VISHAY	MOSFET N-CH 40V 100A TO252AA
	Mfr.#: SQD100N04-3M6 OMO.#: OMO-SQD100N04-3M6-1190	New and Original
	Mfr.#: SQD100N04-3M6L OMO.#: OMO-SQD100N04-3M6L-1190	New and Original
	Mfr.#: SQD100N043M6LGE3 OMO.#: OMO-SQD100N043M6LGE3-1190	Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of SQD100N04_3M6T4GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

2500: ~~$0.60~~; ~~$1 510.00~~

5000: ~~$0.57~~; ~~$2 870.00~~

10000: ~~$0.55~~; ~~$5 520.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SQD100N04_3M6T4GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes