MJE181STU

MJE181STU
Mfr. #:
MJE181STU
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Epitaxial Sil
Lifecycle:
New from this manufacturer.
Datasheet:
MJE181STU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Mounting Style:
Through Hole
Package / Case:
TO-126-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
60 V
Collector- Base Voltage VCBO:
80 V
Emitter- Base Voltage VEBO:
7 V
Collector-Emitter Saturation Voltage:
1.7 V
Maximum DC Collector Current:
3 A
Gain Bandwidth Product fT:
50 MHz
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Series:
MJE181
DC Current Gain hFE Max:
250
Height:
11 mm
Length:
8 mm
Packaging:
Tube
Width:
3.25 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
3 A
DC Collector/Base Gain hfe Min:
50
Pd - Power Dissipation:
12.5 W
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
1920
Subcategory:
Transistors
Unit Weight:
0.026843 oz
Tags
MJE181, MJE18, MJE1, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,bjt,npn,60V V(Br)Ceo,3A I(C),to-126 Rohs Compliant: Yes
***emi
3.0 A, 60 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***ark
Bipolar (BJT) Single Transistor, NPN, 60 V, 1.25 W, 1.5 A, 40
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bulk
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***nell
TRANSISTOR, NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 500mA; Hfe Min: 100; Termination Type: Through Hole; Transistor Type: Power Bipolar
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
***ure Electronics
BD135 Series 60 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-126
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Tube
***el Electronic
Bipolar Transistors - BJT NPN Epitaxial Sil
***nell
TRANSISTOR, BIPOL, NPN, 60V, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 12.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 63hFE; Transis
***et
Bipolar (BJT) Transistor NPN 45V 2A 3MHz 25W Through Hole TO-126
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***ark
RAIL / NPN/2A/45V/TO-126
***el Electronic
JFET N-CH 30V 625MW TO92
Part # Mfg. Description Stock Price
MJE181STU
DISTI # V36:1790_06302177
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1288
  • 25000:$0.1318
  • 10000:$0.1388
  • 2500:$0.1487
  • 1000:$0.1744
  • 100:$0.2247
  • 10:$0.4029
  • 1:$0.4868
MJE181STU
DISTI # MJE181STU-ND
ON SemiconductorTRANS NPN 60V 3A TO-126
RoHS: Compliant
Min Qty: 1
Container: Tube
1129In Stock
  • 1000:$0.1830
  • 500:$0.2368
  • 100:$0.3014
  • 10:$0.4040
  • 1:$0.4700
MJE181STU
DISTI # 26636602
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST5760
  • 50000:$0.1301
  • 25000:$0.1307
  • 10000:$0.1376
  • 2500:$0.1475
  • 1920:$0.1732
MJE181STU
DISTI # 27461005
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1385
  • 25000:$0.1417
  • 10000:$0.1492
  • 2500:$0.1599
  • 1000:$0.1875
  • 100:$0.2416
  • 49:$0.3938
MJE181STU
DISTI # MJE181STU
ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 2273
Container: Bulk
Americas - 0
  • 22730:$0.1349
  • 11365:$0.1389
  • 6819:$0.1409
  • 4546:$0.1419
  • 2273:$0.1429
MJE181STU
DISTI # MJE181STU
ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 1920
Container: Tube
Americas - 0
  • 19200:$0.1259
  • 11520:$0.1289
  • 7680:$0.1309
  • 1920:$0.1329
  • 3840:$0.1329
MJE181STU
DISTI # 82C8693
ON SemiconductorTRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-126 ROHS COMPLIANT: YES0
  • 50000:$0.1400
  • 24000:$0.1430
  • 10000:$0.1500
  • 2000:$0.1600
  • 1000:$0.1650
  • 100:$0.2320
  • 10:$0.3450
  • 1:$0.5080
MJE181STU
DISTI # 512-MJE181STU
ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
RoHS: Compliant
5963
  • 1:$0.4500
  • 10:$0.3710
  • 100:$0.2260
  • 1000:$0.1750
  • 2500:$0.1490
MJE181STUFairchild Semiconductor CorporationPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
RoHS: Compliant
5760
  • 500:$0.1500
  • 1000:$0.1500
  • 100:$0.1600
  • 25:$0.1700
  • 1:$0.1800
MJE181STU
DISTI # 8062891
ON SemiconductorTRANSISTORFAIRCHILDMJE181STU, TU720
  • 600:£0.1770
  • 300:£0.2020
  • 120:£0.2260
  • 60:£0.3030
Image Part # Description
OPA1678IDR

Mfr.#: OPA1678IDR

OMO.#: OMO-OPA1678IDR

Operational Amplifiers - Op Amps DUAL AUDIO OPAMP
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI

SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
MJE171G

Mfr.#: MJE171G

OMO.#: OMO-MJE171G

Bipolar Transistors - BJT 3A 60V 12.5W PNP
MJE181G

Mfr.#: MJE181G

OMO.#: OMO-MJE181G

Bipolar Transistors - BJT 3A 60V 12.5W NPN
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L

Common Mode Chokes / Filters 250ohms 3A 50VDC AECQ200 Pwrtrain/Saf
FG16C0G1H104JNT06

Mfr.#: FG16C0G1H104JNT06

OMO.#: OMO-FG16C0G1H104JNT06

Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 0.1uF C0G 5% LS:2.5mm
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI-INTEGRATED-SILICON-SOLUTION

SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
1025HC50-RTR

Mfr.#: 1025HC50-RTR

OMO.#: OMO-1025HC50-RTR-EATON

Fast-acting, high current, surface mount ceramic tube fuses
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L-MURATA-ELECTRONICS

CMC 3A 2LN 250 OHM SMD
OPA1678IDR

Mfr.#: OPA1678IDR

OMO.#: OMO-OPA1678IDR-TEXAS-INSTRUMENTS

IC AUDIO AMP 2 CIRCUIT 8SOIC
Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of MJE181STU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.45
$0.45
10
$0.37
$3.71
100
$0.23
$22.60
1000
$0.18
$175.00
2500
$0.15
$372.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
Top