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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # 25M7808 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 1.7A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 | |
| BSP373 L6327 DISTI # 726-BSP373L6327 | Infineon Technologies AG | MOSFET N-Ch 100V 1.7A SOT-223-3 RoHS: Compliant | 0 | |
| BSP373L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BSP373L6327 OMO.#: OMO-BSP373L6327-1190 |
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP373L6327HTSA1 |
MOSFET N-CH 100V 1.7A SOT-223 |
