BSP373

BSP373N H6327 vs BSP373 E6327 vs BSP373L6327HTSA1

 
PartNumberBSP373N H6327BSP373 E6327BSP373L6327HTSA1
DescriptionMOSFET N-Ch 100V 1.8A SOT-223-3MOSFET N-CH 100V 1.7A SOT-223MOSFET N-CH 100V 1.7A SOT-223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.8 A--
Rds On Drain Source Resistance177 mOhms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP373--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min3.23 S--
Fall Time13.5 ns--
Product TypeMOSFET--
Rise Time5.9 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21.9 ns--
Typical Turn On Delay Time4.6 ns--
Part # AliasesBSP373NH6327XTSA1 SP001059328--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSP373N H6327 MOSFET N-Ch 100V 1.8A SOT-223-3
BSP373NH6327XTSA1 MOSFET N-Ch 100V 1.8A SOT-223-3
BSP373 E6327 MOSFET N-CH 100V 1.7A SOT-223
BSP373L6327HTSA1 MOSFET N-CH 100V 1.7A SOT-223
BSP373NH6327XTSA1 MOSFET N-CH 100V 1.7A SOT-223
BSP373 New and Original
BSP373 , LP2985IM5-1.8 New and Original
BSP373 L6327 Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP373L6327)
BSP373 _ New and Original
BSP373-E6327 New and Original
BSP373E6327 - Bulk (Alt: BSP373E6327)
BSP373L6327 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP373N New and Original
BSP373N H6327 Trans MOSFET N-CH 100V 1.8A T/R
BSP373NH6327 100V,1.8A,N-Ch Small-Signal MOSFET
BSP373NH6327S New and Original
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