IRLU7807ZPBF

IRLU7807ZPBF
Mfr. #:
IRLU7807ZPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
Lifecycle:
New from this manufacturer.
Datasheet:
IRLU7807ZPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU7807ZPBF DatasheetIRLU7807ZPBF Datasheet (P4-P6)IRLU7807ZPBF Datasheet (P7-P9)IRLU7807ZPBF Datasheet (P10-P12)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
43 A
Rds On - Drain-Source Resistance:
18.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
7 nC
Pd - Power Dissipation:
40 W
Configuration:
Single
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Width:
2.38 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
75
Subcategory:
MOSFETs
Part # Aliases:
SP001568878
Unit Weight:
0.139332 oz
Tags
IRLU7, IRLU, IRL
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 43A, 13.8 MOHM, 7 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 30V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.8mohm; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:IPAK; Power Dissipation Pd:40mW; Pulse Current Idm:170A; SMD Marking:40; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:9.8ns; Turn On Time:7.1ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***emi
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***ponent Stockers USA
7.8 A 25 V 0.014 ohm N-CHANNEL Si POWER MOSFET
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N, 25V, I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:45A; Resistance, Rds On:0.0117ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:50W; Voltage, Vds Max:25V
***emi
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***ser
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Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***inecomponents.com
25V,35A,14OHM, NCH, IPAK, POWER TRENCH MOSFET
***Yang
MOSFET 25V N-Channel PowerTrench MOSFET - Bulk
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO251-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Part # Mfg. Description Stock Price
IRLU7807ZPBF
DISTI # IRLU7807ZPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 43A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube
Limited Supply - Call
    IRLU7807ZPBF
    DISTI # 70018000
    Infineon Technologies AGMOSFET,N Ch.,30V,43A,13.8 MOHM,7 NC QG,I-PAK,Pb-Free
    RoHS: Compliant
    0
    • 1:$0.5200
    IRLU7807ZPBF
    DISTI # 942-IRLU7807ZPBF
    Infineon Technologies AGMOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
    RoHS: Compliant
    0
      IRLU7807ZPBFInternational Rectifier 
      RoHS: Compliant
      Europe - 2250
        IRLU7807ZPBF
        DISTI # 1436997
        Infineon Technologies AG 
        RoHS: Compliant
        0
        • 1:$2.5200
        • 10:$2.0700
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        IGBT Transistors MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
        Availability
        Stock:
        Available
        On Order:
        1000
        Enter Quantity:
        Current price of IRLU7807ZPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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