IRLR/U7807ZPbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
DSS
∆
J
Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C
DS(on)
Static Drain-to-Source On-Resistance ––– 11 13.8
Ω
––– 14.5 18.2
GS(th)
Gate Threshold Voltage 1.35 1.8 2.25 V
∆
GS(th)
∆
J
Gate Threshold Voltage Coefficient ––– -4.5 ––– mV/°C
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 51 ––– ––– S
g
Total Gate Charge ––– 7.0 11
gs1
Pre-Vth Gate-to-Source Charge ––– 1.8 –––
gs2
Post-Vth Gate-to-Source Charge ––– 0.7 ––– nC
gd
Gate-to-Drain Charge ––– 2.7 –––
godr
Gate Charge Overdrive ––– 1.8 ––– See Fig. 16
sw
gs2
gd
––– 3.4 –––
oss
Output Charge ––– 4.0 ––– nC
d(on)
Turn-On Delay Time ––– 7.1 –––
r
Rise Time –––28–––
d(off)
Turn-Off Delay Time ––– 9.8 ––– ns
f
Fall Time ––– 3.5 –––
iss
Input Capacitance ––– 780 –––
oss
Output Capacitance ––– 180 ––– pF
rss
Reverse Transfer Capacitance ––– 100 –––
Avalanche Characteristics
Parameter Units
AS
Single Pulse Avalanche Energy
mJ
AR
A
AR
Repetitive Avalanche Energy
mJ
Parameter Min. Typ. Max. Units
S
Continuous Source Current ––– –––
(Body Diode) A
SM
Pulsed Source Current ––– ––– 170
(Body Diode)
SD
Diode Forward Voltage ––– ––– 1.0 V
rr
Reverse Recovery Time ––– 23 35 ns
rr
Reverse Recovery Charge ––– 14 21 nC
on
Forward Turn-On Time
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Conditions
4.0
Max.
28
12
ƒ = 1.0MHz
I
D
= 12A
V
DS
= 15V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
Clamped Inductive Load
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 12A
V
GS
= 0V
V
DS
= 15V