IRFH5304TR2PBF

IRFH5304TR2PBF
Mfr. #:
IRFH5304TR2PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 79A 4.5mOhm 16nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRFH5304TR2PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PQFN-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
22 A
Rds On - Drain-Source Resistance:
4.5 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
16 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.6 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.83 mm
Length:
6 mm
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
88 S
Fall Time:
6.6 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
12 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
SP001575644
Unit Weight:
0.070548 oz
Tags
IRFH5304, IRFH53, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***ied Electronics & Automation
MOSFET, 30V, 79A, 4.5 mOhm, 16 nC Qg, PQFN
***ment14 APAC
MOSFET, N CH, 30V, 79A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Power Dissipation Pd:46W; Voltage Vgs Max:20V
Part # Mfg. Description Stock Price
IRFH5304TR2PBF
DISTI # IRFH5304TR2PBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 22A 8VQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRFH5304TR2PBF
    DISTI # IRFH5304TR2PBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 30V 22A 8VQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRFH5304TR2PBF
      DISTI # 70019258
      Infineon Technologies AGIRFH5304TR2PBF N-channel MOSFET Transistor,22 A,30 V,8-Pin PQFN
      RoHS: Compliant
      0
      • 800:$1.0600
      • 1600:$1.0390
      • 4000:$1.0070
      • 8000:$0.9650
      • 20000:$0.9010
      IRFH5304TR2PBF
      DISTI # 942-IRFH5304TR2PBF
      Infineon Technologies AGMOSFET MOSFT 30V 79A 4.5mOhm 16nC Qg
      RoHS: Compliant
      0
        IRFH5304TR2PBFInternational Rectifier 
        RoHS: Compliant
        Europe - 1600
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          OMO.#: OMO-IRFH5304TR2PBF-INFINEON-TECHNOLOGIES

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          Availability
          Stock:
          Available
          On Order:
          2000
          Enter Quantity:
          Current price of IRFH5304TR2PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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