PGA26E07BA

Mfr. #:: PGA26E07BA
Manufacturer:: Panasonic
Description:: MOSFET MOSFET 600VDC 70mohm X-GaN
Lifecycle:: New from this manufacturer.
Datasheet:: PGA26E07BA Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: PGA26E07BA more Information

Product Attribute
Attribute Value

Manufacturer:: Panasonic

Product Category:: MOSFET

RoHS:: Y

Technology:: GaN

Mounting Style:: SMD/SMT

Package / Case:: DFN-8

Number of Channels:: 1 Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 26 A

Rds On - Drain-Source Resistance:: 70 mOhms

Qg - Gate Charge:: 5 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 96 W

Configuration:: Single

Tradename:: X-GaN

Packaging:: Reel

Series:: PGA26E07BA

Brand:: Panasonic

Moisture Sensitive:: Yes

Product Type:: MOSFET

Factory Pack Quantity:: 200

Subcategory:: MOSFETs

Part # Aliases:: PGA26E07BA2

Tags: PGA26E0, PGA26, PGA2, PGA

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PGA26E07BA Description

***asonic SCT: GaN Power Devices, 600V, DFN 8x8, RoHS

*** International: PANASONIC/ New

PGA26E07BA More Information

PGA26E X-GaN Power Transistors: Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.

X-GaN Power Solutions: Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.

Market price

Part #	Mfg.	Description	Stock	Price
PGA26E07BA DISTI # 667-PGA26E07BA	Panasonic Electronic Components	MOSFET MOSFET 600VDC 70mohm X-GaN RoHS: Compliant	29	1:$35.4300 10:$33.4600 25:$31.4900
PGA26E07BA-SWEVB008 DISTI # 667-PGA26E07BASWEV8	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB RoHS: Compliant	15	1:$400.0000
PGA26E07BA-SWEVB006 DISTI # 667-PGA26E07BASWEVB6	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB RoHS: Compliant	2	1:$375.0000
PGA26E07BA-DB001 DISTI # 667-PGA26E07BADAB001	Panasonic Electronic Components	Power Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN RoHS: Compliant	0	1:$55.0000

Related products

Image	Part #	Description
	Mfr.#: UCC27511ADBVR OMO.#: OMO-UCC27511ADBVR	Gate Drivers Single Driver
	Mfr.#: GS-065-008-1-L OMO.#: OMO-GS-065-008-1-L	MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
	Mfr.#: GS66506T-E01-MR OMO.#: OMO-GS66506T-E01-MR	MOSFET 650V 22A E-Mode GaN
	Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR	MOSFET 650V 30A E-Mode GaN
	Mfr.#: STPSC10H065GY-TR OMO.#: OMO-STPSC10H065GY-TR	Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
	Mfr.#: LMG1020YFFR OMO.#: OMO-LMG1020YFFR	Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
	Mfr.#: LMG3410R070RWHT OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS	PWR MGMT MOSFET/PWR DRIVER
	Mfr.#: GS66506T-E01-MR OMO.#: OMO-GS66506T-E01-MR-1190	MOSFET 650V 22A E-Mode GaN
	Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR-1190	MOSFET 650V 30A E-Mode GaN
	Mfr.#: UCC27511ADBVR OMO.#: OMO-UCC27511ADBVR-TEXAS-INSTRUMENTS	SINGLE DRIVER

Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of PGA26E07BA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$35.43~~; ~~$35.43~~

10: ~~$33.46~~; ~~$334.60~~

25: ~~$31.49~~; ~~$787.25~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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PGA26E07BA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes