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IRF7406TRPBF

IRF7406TRPBF
Mfr. #:
IRF7406TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7406TRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7406TRPBF DatasheetIRF7406TRPBF Datasheet (P4-P6)IRF7406TRPBF Datasheet (P7-P9)
ECAD Model:
More Information:
IRF7406TRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
5.8 A
Rds On - Drain-Source Resistance:
70 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
39.3 nC
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 P-Channel
Width:
3.9 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Part # Aliases:
SP001554244
Unit Weight:
0.019048 oz
Tags
IRF7406T, IRF7406, IRF740, IRF74, IRF7, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ure Electronics
IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
***et
Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.8A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ure Electronics
Single P-Channel 30 V 2.5 W 38 nC Silicon Surface Mount Mosfet - SOIC-8
***et
Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; On Resistance Rds(On):0.026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: No
***(Formerly Allied Electronics)
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V
*** Source Electronics
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
***eco
Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC
***ure Electronics
Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ter Electronics
MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14
***ure Electronics
Single N-Channel 30 V 0.03 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC Tube / MOSFET N-CH 30V 7A 8-SOIC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N CHANNEL MOSFET, 30V, 7A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes
***ure Electronics
N/P Channel 30 V 32/39 mO 2.9 nC Complementary Enhancement Mode Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N/P-CH 30V 5.1A/7A 8-Pin SO T/R / MOSFET N/P-CH 30V 8.1A/7A 8SOP
***roFlash
Power Field-Effect Transistor, 8.1A I(D), 30V, 0.032ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.6A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.8W; Drain Source On Resistance @ 10V:35mohm; Drain Source On Resistance @ 4.5V:600mohm ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 30V, 5.6A, MICRO8; Tra; N CHANNEL MOSFET, 30V, 5.6A, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V
***(Formerly Allied Electronics)
SI4431CDY-T1-GE3 P-channel MOSFET Transistor; 7.2 A; 30 V; 8-Pin SOIC
***ure Electronics
Single P-Channel 30 V 32 mOhms Surface Mount Power Mosfet - SOIC-8
*** Stop Electro
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -30V, -9A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.026Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
***emi
N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ
***ure Electronics
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
***Yang
Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R - Tape and Reel
***emi
Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Product Range:-Rohs Compliant: Yes
***ure Electronics
ZXMP3A16 Series 30 V 0.04 Ohm P-Channel Enhancement Mode MOSFET - SOIC-8
***et
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 30V 6.7A SOIC8
***ark
Mosfet, P-Ch, 30V, 6.7A, Soic Rohs Compliant: Yes
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***S
French Electronic Distributor since 1988
***(Formerly Allied Electronics)
SI4620DY-T1-GE3 N-channel MOSFET Transistor; 7.5 A; 30 V; 8-Pin SOIC
***ical
Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R
***S
French Electronic Distributor since 1988
***emi
Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY
***Yang
Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R - Tape and Reel
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.024ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Part # Mfg. Description Stock Price
IRF7406TRPBF
DISTI # V72:2272_13889775		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R359
  • 250:$0.4460
  • 100:$0.5371
  • 25:$0.6589
  • 10:$0.7084
  • 1:$0.7573
IRF7406TRPBF
DISTI # IRF7406PBFCT-ND		Infineon Technologies AGMOSFET P-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3737In Stock
  • 1000:$0.5141
  • 500:$0.6512
  • 100:$0.8397
  • 10:$1.0620
  • 1:$1.2000
IRF7406TRPBF
DISTI # IRF7406PBFDKR-ND		Infineon Technologies AGMOSFET P-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3737In Stock
  • 1000:$0.5141
  • 500:$0.6512
  • 100:$0.8397
  • 10:$1.0620
  • 1:$1.2000
IRF7406TRPBF
DISTI # IRF7406PBFTR-ND		Infineon Technologies AGMOSFET P-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.4658
IRF7406TRPBF
DISTI # 31299294		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R8000
  • 4000:$0.3552
IRF7406TRPBF
DISTI # 26755959		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R359
  • 250:$0.4460
  • 100:$0.5371
  • 25:$0.6589
  • 21:$0.7084
IRF7406TRPBF
DISTI # IRF7406TRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7406TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.3479
  • 8000:$0.3359
  • 16000:$0.3229
  • 24000:$0.3129
  • 40000:$0.3069
IRF7406TRPBF
DISTI # IRF7406TRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R (Alt: IRF7406TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3000
  • 8000:$0.2917
  • 12000:$0.2838
  • 20000:$0.2763
  • 40000:$0.2727
  • 100000:$0.2692
  • 200000:$0.2658
IRF7406TRPBF
DISTI # 13AC9194		Infineon Technologies AGMOSFET, P-CH, -30V, -5.8A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power RoHS Compliant: Yes1469
  • 1:$1.0000
  • 25:$0.8470
  • 50:$0.7490
  • 100:$0.6510
  • 250:$0.6130
  • 500:$0.5750
  • 1000:$0.4540
IRF7406TRPBF
DISTI # 40M7952		Infineon Technologies AGMOSFET Transistor,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.07ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-,Power Dissipation Pd:2.5W RoHS Compliant: Yes1385
  • 1:$1.1000
  • 25:$0.9320
  • 50:$0.8240
  • 100:$0.7160
  • 250:$0.6740
  • 500:$0.6330
  • 1000:$0.4990
IRF7406TRPBF.
DISTI # 27AC6897		Infineon Technologies AGMOSFET Transistor,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.07ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-,Power Dissipation Pd:2.5W RoHS Compliant: Yes0
  • 1:$0.3480
  • 8000:$0.3360
  • 16000:$0.3230
  • 24000:$0.3130
  • 40000:$0.3070
IRF7406TRPBF
DISTI # 70017703		Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.045Ohm,ID -5.8A,SO-8,PD 2.5W,VGS +/-20V
RoHS: Compliant		0
  • 4000:$0.9200
IRF7406TRPBF
DISTI # 942-IRF7406TRPBF		Infineon Technologies AGMOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC
RoHS: Compliant		10552
  • 1:$1.0000
  • 10:$0.8470
  • 100:$0.6510
  • 500:$0.5750
  • 1000:$0.4540
IRF7406TRPBFInfineon Technologies AGSingle P-Channel 30 V 0.045 Ohm 39.3 nC HEXFET Power Mosfet - SOIC-8
RoHS: Compliant		4000Reel
  • 4000:$0.3700
IRF7406TRPBFInfineon Technologies AGSingle P-Channel 30 V 0.045 Ohm 39.3 nC HEXFET Power Mosfet - SOIC-8
RoHS: Compliant		57Cut Tape/Mini-Reel
  • 1:$0.5700
  • 100:$0.4750
  • 250:$0.4600
  • 500:$0.4450
  • 1500:$0.4100
IRF7406TRPBF
DISTI # 9154951P		Infineon Technologies AGMOSFET P-CHANNEL HEXFET 30V 5.8A SOIC8, RL6280
  • 100:£0.3530
  • 400:£0.3110
  • 1000:£0.2860
IRF7406TRPBFInternational Rectifier6.7 A, 30 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA612
  • 137:$0.3080
  • 31:$0.4400
  • 1:$0.8800
IRF7406TRPBFInternational Rectifier6.7 A, 30 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA1260
  • 636:$0.2730
  • 115:$0.3150
  • 1:$1.0500
IRF7406TRPBFInfineon Technologies AG 1767
    IRF7406TRPBFInternational Rectifier 1575
    • 7:$0.7875
    • 27:$0.5119
    • 99:$0.2953
    • 340:$0.2520
    • 736:$0.2205
    IRF7406TRPBFInternational Rectifier 872
      IRF7406TRPBF
      DISTI # C1S322000484380      		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R
      RoHS: Compliant      		359
      • 250:$0.4460
      • 100:$0.5371
      • 25:$0.6589
      • 10:$0.7084
      IRF7406TRPBF
      DISTI # C1S322000484399      		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R
      RoHS: Compliant      		8000
      • 4000:$0.3840
      IRF7406TRPBF
      DISTI # 2725903      		Infineon Technologies AGMOSFET, P-CH, -30V, -5.8A, SOIC
      RoHS: Compliant      		1469
      • 1:$1.5900
      • 10:$1.3500
      • 100:$1.0400
      • 500:$0.9110
      • 1000:$0.7190
      • 4000:$0.6380
      • 8000:$0.6150
      IRF7406TRPBF
      DISTI # 2725903      		Infineon Technologies AGMOSFET, P-CH, -30V, -5.8A, SOIC
      RoHS: Compliant      		1694
      • 5:£0.4190
      • 25:£0.3880
      • 100:£0.3570
      • 250:£0.3140
      • 500:£0.3020
      Image Part # Description
      MAX933ESA+

      Mfr.#: MAX933ESA+

      OMO.#: OMO-MAX933ESA-

      		 Analog Comparators Comparator w/2% Reference
      SK56L-TP

      Mfr.#: SK56L-TP

      OMO.#: OMO-SK56L-TP

      		 Schottky Diodes & Rectifiers DIODE SCHOTTKY 60V 5A DO214AB
      MAX706RESA+T

      Mfr.#: MAX706RESA+T

      OMO.#: OMO-MAX706RESA-T-976

      		 Supervisory Circuits Single uPower Supervisor
      TZM5223B-GS08

      Mfr.#: TZM5223B-GS08

      OMO.#: OMO-TZM5223B-GS08

      		 Zener Diodes 2.7 Volt 0.5 Watt
      TZM5230B-GS08

      Mfr.#: TZM5230B-GS08

      OMO.#: OMO-TZM5230B-GS08

      		 Zener Diodes 4.7 Volt 0.5 Watt
      TZM5231B-GS08

      Mfr.#: TZM5231B-GS08

      OMO.#: OMO-TZM5231B-GS08

      		 Zener Diodes 5.1 Volt 0.5 Watt
      ZM4740A-GS08

      Mfr.#: ZM4740A-GS08

      OMO.#: OMO-ZM4740A-GS08

      		 Zener Diodes 10 Volt 1 Watt 5%
      FDLL4148

      Mfr.#: FDLL4148

      OMO.#: OMO-FDLL4148

      		 Diodes - General Purpose, Power, Switching 100V Io/200mA T/R
      V33MLA1206NH

      Mfr.#: V33MLA1206NH

      OMO.#: OMO-V33MLA1206NH

      		 Varistors 33V 180A 500pF
      MAX933ESA+

      Mfr.#: MAX933ESA+

      OMO.#: OMO-MAX933ESA--MAXIM-INTEGRATED

      		 Analog Comparators Comparator w/2% Reference
      Availability
      Stock:
      Available
      On Order:
      1992
      Enter Quantity:
      Current price of IRF7406TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.99
      $0.99
      10
      $0.85
      $8.47
      100
      $0.65
      $65.10
      500
      $0.58
      $287.50
      1000
      $0.45
      $454.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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