IRF7406

IRF7406GTRPBF vs IRF7406GTRPBF. vs IRF7406

 
PartNumberIRF7406GTRPBFIRF7406GTRPBF.IRF7406
DescriptionMOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC6.7 A, 30 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current5.8 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Qg Gate Charge59 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 P-Channel--
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min3.1 S--
Fall Time47 ns--
Product TypeMOSFET--
Rise Time33 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001563604--
Unit Weight0.019048 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF7406TRPBF MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC
IRF7406GTRPBF MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC
IRF7406TRPBF-CUT TAPE New and Original
IRF7406TRPBF. MOSFET Transistor, Transistor Polarity:P Channel, Continuous Drain Current Id:-2.8A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Volta
IRF7406GTRPBF. New and Original
IRF7406 6.7 A, 30 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
IRF7406PBF-1 New and Original
IRF7406TRPBF,IRF7406PBF, New and Original
IRF7406TRPBF-1 New and Original
Infineon Technologies
Infineon Technologies
IRF7406PBF MOSFET P-CH 30V 5.8A 8-SOIC
IRF7406TRPBF MOSFET P-CH 30V 5.8A 8-SOIC
IRF7406GTRPBF MOSFET P-CH 30V 6.7A 8-SOIC
Top