FDN308P_F154

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SSOT-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

1.5 A

Rds On - Drain-Source Resistance:

136 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

3.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Packaging:

Reel

Height:

1.12 mm

Length:

2.9 mm

Series:

FDN308P

Transistor Type:

1 P-Channel

Width:

1.4 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

12 S

Fall Time:

8 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12 ns

Typical Turn-On Delay Time:

8 ns

Unit Weight:

0.001058 oz

Tags

FDN308P, FDN308, FDN30, FDN3, FDN