IPD400N06N G

Mfr. #:: IPD400N06N G
Manufacturer:: 10INFINEON
Description:: IGBT Transistors MOSFET N-Ch 60V 27A DPAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPD400N06N G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Product Attribute
Attribute Value

Manufacturer: 10INFINEON

Product Category: FETs - Single

Series: IPD400N06

Packaging: Reel

Part-Aliases: IPD400N06NGBTMA1 IPD400N06NGXT SP000443744

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Tradename: OptiMOS

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 68 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 23 ns

Rise-Time: 24 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 27 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistance: 40 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 24 ns

Typical-Turn-On-Delay-Time: 9 ns

Channel-Mode: Enhancement

Tags: IPD400N06NG, IPD400, IPD40, IPD4, IPD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD400N06N G Description

***p One Stop Global: Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) TO-252 T/R

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 30 V 0.031 Ohm 29 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):31mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

***(Formerly Allied Electronics): MOSFET, 55V, 24A, 40 mOhm, 16.7 nC Qg, Logic Level, D-Pak

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***nell: MOSFET, N-CH, 55V, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Di

*** Stop Electro: Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 28 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

***emi: N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ

***ure Electronics: N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.

***emi: N-Channel UltraFET® Power MOSFET 55V, 20A, 36mΩ

***Yang: Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) DPAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***inecomponents.com: 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

***Yang: TRANS MOSFET N-CH 55V 20A 3PIN TO-252AA - Bulk

***S: French Electronic Distributor since 1988

***el Electronic: IC AMP AB STEREO 80MW VCSP50L2

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
IPD400N06NGBTMA1 DISTI # V72:2272_06390958	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	4991	3000:$0.3200 1000:$0.3376 500:$0.3832 250:$0.4181 100:$0.4484 25:$0.5237 10:$0.5362 1:$0.6055
IPD400N06NGBTMA1 DISTI # IPD400N06NGBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 27A TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	2500:$0.3348
IPD400N06NGBTMA1 DISTI # IPD400N06NGBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 27A TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD400N06NGBTMA1 DISTI # IPD400N06NGBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 27A TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD400N06NGBTMA1 DISTI # 26749680	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	5000	2500:$0.3421
IPD400N06NGBTMA1 DISTI # 26759950	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	4991	3000:$0.3200 1000:$0.3376 500:$0.3832 250:$0.4181 100:$0.4484 25:$0.5237 24:$0.5362
IPD400N06N G DISTI # IPD400N06N G	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin TO-252 T/R (Alt: IPD400N06N G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
IPD400N06N G DISTI # SP000443744	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin TO-252 T/R (Alt: SP000443744) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4529 5000:€0.3899 10000:€0.3319 15000:€0.2849 25000:€0.2699
IPD400N06N G DISTI # SP000443744	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin TO-252 T/R (Alt: SP000443744) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3799 5000:€0.3109 10000:€0.2849 15000:€0.2629 25000:€0.2439
IPD400N06NGXT DISTI # IPD400N06NGBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD400N06NGBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3019 5000:$0.2909 10000:$0.2799 15000:$0.2709 25000:$0.2659
IPD400N06N G DISTI # 726-IPD400N06NG	Infineon Technologies AG	MOSFET N-Ch 60V 27A DPAK-2 RoHS: Compliant	2416	1:$0.7100 10:$0.5900 100:$0.3810 1000:$0.3050
IPD400N06NGBTMA1 DISTI # N/A	Infineon Technologies AG	MOSFET MV POWER MOS	0
IPD400N06NGBTMA1 DISTI # C1S322000642434	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	4991	250:$0.4231 100:$0.4538 25:$0.5278 10:$0.5393
IPD400N06NGBTMA1 DISTI # C1S322000674503	Infineon Technologies AG	MOSFETs RoHS: Compliant	5000	2500:$0.4410

Image	Part #	Description
	Mfr.#: IPD400N06NGBTMA1 OMO.#: OMO-IPD400N06NGBTMA1	MOSFET MV POWER MOS
	Mfr.#: IPD400N06NGXT OMO.#: OMO-IPD400N06NGXT-1190	Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD400N06NGBTMA1)
	Mfr.#: IPD400N06N OMO.#: OMO-IPD400N06N-1190	New and Original
	Mfr.#: IPD400N06N3G 400N06N OMO.#: OMO-IPD400N06N3G-400N06N-1190	New and Original
	Mfr.#: IPD400N06NG OMO.#: OMO-IPD400N06NG-1190	New and Original
	Mfr.#: IPD400N06NGBTMA1 OMO.#: OMO-IPD400N06NGBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 27A TO-252
	Mfr.#: IPD400N06N G OMO.#: OMO-IPD400N06N-G-126	IGBT Transistors MOSFET N-Ch 60V 27A DPAK-2

IPD400N06N G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes