PartNumber | IPD40N03S4L-08 | IPD40DP06NMATMA1 | IPD400N06NGBTMA1 |
Description | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS-T2 | MOSFET TRENCH 40<-<100V | MOSFET MV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - 60 V | - |
Id Continuous Drain Current | 40 A | - 4.3 A | - |
Rds On Drain Source Resistance | 8.3 mOhms | 400 mOhms | - |
Configuration | Single | Single | - |
Qualification | AEC-Q101 | - | - |
Tradename | OptiMOS | - | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | - | 2.3 mm |
Length | 6.5 mm | - | 6.5 mm |
Series | OptiMOS-T2 | IPD06P007 | - |
Transistor Type | 1 N-Channel | 1 P-Channel | - |
Width | 6.22 mm | - | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPD40N03S4L08ATMA1 IPD4N3S4L8XT SP000475916 | IPD40DP06NM SP004987264 | G IPD400N06N IPD4N6NGXT SP000443744 |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | - 4 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 6.7 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 19 W | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 3.8 S | - |
Fall Time | - | 4 ns | - |
Rise Time | - | 6 ns | - |
Typical Turn Off Delay Time | - | 10 ns | - |
Typical Turn On Delay Time | - | 4 ns | - |