IPT007N06NATMA1

IPT007N06NATMA1
Mfr. #:
IPT007N06NATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
IPT007N06NATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPT007N06NATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-HSOF-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
300 A
Rds On - Drain-Source Resistance:
750 uOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
216 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
2.4 mm
Length:
10.58 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Type:
Power Transistor
Width:
10.1 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
160 S
Fall Time:
22 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
76 ns
Typical Turn-On Delay Time:
38 ns
Part # Aliases:
IPT007N06N SP001100158
Unit Weight:
0.002293 oz
Tags
IPT007, IPT00, IPT0, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 300 A, 60 V, 8-Pin HSOF Infineon IPT007N06NATMA1
***ure Electronics
Single N-Channel 60 V 0.75 mOhm 216 nC OptiMOS™ Power Mosfet - HSOF-8-1
***p One Stop Japan
Trans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) HSOF T/R
***ponent Sense
MOSFET N-CHANNEL 52A 60V-TRANSISTOR FET
***p One Stop Global
Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF T/R
***ical
Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF
***et Europe
Trans MOSFET N-CH 60V 300A 8-Pin HSOF T/R
***ark
MOSFET, N-CH, 60V, 300A, HSOF-8
***i-Key
MOSFET N-CH 60V 300A 8HSOF
***ronik
N-CH 60V 300A 0,75mOhm HSOF-8
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 300A, HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:60V; On Resistance Rds(on):660µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:375W; Transistor Case Style:HSOF; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 60V, 300A, HSOF-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:300A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):660µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:HSOF; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The new TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. | Summary of Features: Industrys lowest R DS(on); Highest current capability up to 300A; Very low package parasitics and inductances | Benefits: Less paralleling and cooling required; Highest system reliability; System cost reduction; Enabling very compact design | Target Applications: Forklift; Light electric vehicles (LEV) e.g. e-scooter, e-bikes or -car; Point-of-load (POL); Telecom; efuse
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Part # Mfg. Description Stock Price
IPT007N06NATMA1
DISTI # V72:2272_06378296
Infineon Technologies AGTrans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
0
  • 10:$5.3040
  • 1:$6.8508
IPT007N06NATMA1
DISTI # V36:1790_06378296
Infineon Technologies AGTrans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
0
  • 2000:$3.2967
IPT007N06NATMA1
DISTI # IPT007N06NATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 300A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10626In Stock
  • 1000:$3.5893
  • 500:$4.2559
  • 100:$4.9994
  • 10:$6.1020
  • 1:$6.7900
IPT007N06NATMA1
DISTI # IPT007N06NATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 300A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10626In Stock
  • 1000:$3.5893
  • 500:$4.2559
  • 100:$4.9994
  • 10:$6.1020
  • 1:$6.7900
IPT007N06NATMA1
DISTI # IPT007N06NATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 300A 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
10000In Stock
  • 2000:$3.3106
IPT007N06NATMA1
DISTI # 33931583
Infineon Technologies AGTrans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
12000
  • 2000:$2.9095
IPT007N06NATMA1
DISTI # IPT007N06NATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 300A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT007N06NATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 12000:$2.9900
  • 20000:$2.9900
  • 8000:$3.0900
  • 4000:$3.1900
  • 2000:$3.3900
IPT007N06NATMA1
DISTI # SP001100158
Infineon Technologies AGTrans MOSFET N-CH 60V 300A 8-Pin HSOF T/R (Alt: SP001100158)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Europe - 0
  • 20000:€2.6900
  • 12000:€2.7900
  • 8000:€2.8900
  • 4000:€2.9900
  • 2000:€3.0900
IPT007N06NATMA1
DISTI # 50Y2078
Infineon Technologies AGMOSFET, N-CH, 60V, 300A, 175DEG C, 375W,Transistor Polarity:N Channel,Continuous Drain Current Id:300A,Drain Source Voltage Vds:60V,On Resistance Rds(on):660µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes2000
  • 1000:$3.3400
  • 500:$3.9700
  • 250:$4.4200
  • 100:$4.6700
  • 50:$4.9100
  • 25:$5.1400
  • 10:$5.3800
  • 1:$6.3300
IPT007N06NATMA1
DISTI # 726-IPT007N06NATMA1
Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant
5848
  • 1:$6.2700
  • 10:$5.3300
  • 100:$4.6200
  • 250:$4.3800
  • 500:$3.9300
  • 1000:$3.3100
  • 2000:$3.1500
IPT007N06N
DISTI # 726-IPT007N06N
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
2124
  • 1:$6.2700
  • 10:$5.3300
  • 100:$4.6200
  • 250:$4.3800
  • 500:$3.9300
  • 1000:$3.3100
  • 2000:$3.1500
IPT007N06NATMA1
DISTI # 9064407
Infineon Technologies AGMOSFET N-CHANNEL 60V 300A OPTIMOS HSOF9, PK12
  • 500:£2.8600
  • 200:£2.9350
  • 100:£3.0500
  • 20:£3.5150
  • 2:£4.4200
IPT007N06NATMA1
DISTI # 9064407P
Infineon Technologies AGMOSFET N-CHANNEL 60V 300A OPTIMOS HSOF9, RL1760
  • 500:£2.8600
  • 200:£2.9350
  • 100:£3.0500
  • 20:£3.5150
IPT007N06NATMA1
DISTI # 2480868RL
Infineon Technologies AGMOSFET, N-CH, 60V, 300A, HSOF-8
RoHS: Compliant
0
  • 1000:$5.4100
  • 500:$6.4200
  • 100:$7.5400
  • 10:$9.2000
  • 1:$10.2300
IPT007N06NATMA1
DISTI # 2480868
Infineon Technologies AGMOSFET, N-CH, 60V, 300A, HSOF-8
RoHS: Compliant
8984
  • 1000:$5.4100
  • 500:$6.4200
  • 100:$7.5400
  • 10:$9.2000
  • 1:$10.2300
IPT007N06NATMA1
DISTI # 2480868
Infineon Technologies AGMOSFET, N-CH, 60V, 300A, HSOF-814000
  • 500:£3.0600
  • 250:£3.4200
  • 100:£3.5900
  • 10:£4.1400
  • 1:£5.3900
Image Part # Description
LTC7001EMSE#PBF

Mfr.#: LTC7001EMSE#PBF

OMO.#: OMO-LTC7001EMSE-PBF

Gate Drivers Fast 150V Hi Side NMOS Static Switch Drv
IRS10752LTRPBF

Mfr.#: IRS10752LTRPBF

OMO.#: OMO-IRS10752LTRPBF

Gate Drivers Hi Side Gate Driver Single Channel
TPS2829DBVR

Mfr.#: TPS2829DBVR

OMO.#: OMO-TPS2829DBVR

Gate Drivers 2A HS Non-Invert
BSS138LT1G

Mfr.#: BSS138LT1G

OMO.#: OMO-BSS138LT1G

MOSFET 50V 200mA N-Channel
FDBL86561-F085

Mfr.#: FDBL86561-F085

OMO.#: OMO-FDBL86561-F085

MOSFET NMOS TOLL 60V 1.1 MOHM
IRF1010ZSTRLPBF

Mfr.#: IRF1010ZSTRLPBF

OMO.#: OMO-IRF1010ZSTRLPBF

MOSFET MOSFT 55V 94A 7.5mOhm 63nC
CSD19531Q5A

Mfr.#: CSD19531Q5A

OMO.#: OMO-CSD19531Q5A

MOSFET 100V 5.3mOhm Pwr MOSFET
UC2825AQDWRQ1

Mfr.#: UC2825AQDWRQ1

OMO.#: OMO-UC2825AQDWRQ1

Switching Controllers Hi-Spd PWM Cntrlr
TPS57160QDGQRQ1

Mfr.#: TPS57160QDGQRQ1

OMO.#: OMO-TPS57160QDGQRQ1

Switching Voltage Regulators 3.5-60V,1.5A Step Down SWIFT Converter
CM5441Z161B-10

Mfr.#: CM5441Z161B-10

OMO.#: OMO-CM5441Z161B-10

Common Mode Chokes / Filters 160ohms 100MHz 75A 1 Choke Thru-hole
Availability
Stock:
14
On Order:
1997
Enter Quantity:
Current price of IPT007N06NATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.27
$6.27
10
$5.33
$53.30
100
$4.62
$462.00
250
$4.38
$1 095.00
500
$3.93
$1 965.00
1000
$3.31
$3 310.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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