PartNumber | IPT007N06N | IPT004N03L | IPT004N03LATMA1 |
Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET MV POWER MOS | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-HSOF-8 | PG-HSOF-8 | PG-HSOF-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 30 V | 30 V |
Id Continuous Drain Current | 300 A | 300 A | 300 A |
Rds On Drain Source Resistance | 750 uOhms | 400 uOhms | 400 uOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | 700 mV | 700 mV |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 216 nC | 122 nC | 122 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 375 W | 300 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 2.4 mm | 2.4 mm | 2.4 mm |
Length | 10.58 mm | 10.58 mm | 10.58 mm |
Series | OptiMOS 5 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 10.1 mm | 10.1 mm | 10.1 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 160 S | 160 S | 160 S |
Fall Time | 22 ns | 37 ns | 37 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 18 ns | 17 ns | 17 ns |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 76 ns | 149 ns | 149 ns |
Typical Turn On Delay Time | 38 ns | 30 ns | 30 ns |
Part # Aliases | IPT007N06NATMA1 SP001100158 | IPT004N03LATMA1 SP001100156 | IPT004N03L SP001100156 |
Unit Weight | - | 0.002293 oz | - |