IPT007

IPT007N06NATMA1 vs IPT007N06N vs IPT007N06NATMA1-CUT TAPE

 
PartNumberIPT007N06NATMA1IPT007N06NIPT007N06NATMA1-CUT TAPE
DescriptionMOSFET MV POWER MOSMOSFET DIFFERENTIATED MOSFETS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-HSOF-8PG-HSOF-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current300 A300 A-
Rds On Drain Source Resistance750 uOhms750 uOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge216 nC216 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.4 mm2.4 mm-
Length10.58 mm10.58 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
TypePower Transistor--
Width10.1 mm10.1 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min160 S160 S-
Fall Time22 ns22 ns-
Product TypeMOSFETMOSFET-
Rise Time18 ns18 ns-
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time76 ns76 ns-
Typical Turn On Delay Time38 ns38 ns-
Part # AliasesIPT007N06N SP001100158IPT007N06NATMA1 SP001100158-
Unit Weight0.002293 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPT007N06NATMA1 MOSFET MV POWER MOS
IPT007N06N MOSFET DIFFERENTIATED MOSFETS
IPT007N06NATMA1 MOSFET N-CH 60V 300A 8HSOF
IPT007N06NATMA1-CUT TAPE New and Original
IPT007N06N Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF
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